Abstract:The deposition of thin uniform dielectric layers on graphene is important for its successful integration into electronic devices. We report on the atomic layer deposition (ALD) of Al2O3 nanofilms onto graphene grown by chemical vapor deposition onto copper foil. A pretreatment with deionized water (DI H2O) for graphene functionalization was carried out, and, subsequently, trimethylaluminum and DI H2O were used as precursors for the Al2O3 deposition process. The proper temperature regime for this process was adjusted by means of the ALD temperature window for Al2O3 deposition onto a Si substrate. The obtained Al2O3/graphene heterostructures were characterized by Raman and X-ray photoelectron spectroscopy, ellipsometry and atomic force and scanning electron microscopy. Samples of these heterostructures were transferred onto glass substrates by standard methods, with the Al2O3 coating serving as a protective layer during the transfer. Raman monitoring at every stage of the sample preparation and after the transfer enabled us to characterize the influence of the Al2O3 coating on the graphene film.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is: how to successfully deposit a uniform ultrathin dielectric layer (such as Al₂O₃) on the graphene surface to promote its integrated application in electronic devices. Specifically, the paper explores the method of depositing Al₂O₃ nanofilms on graphene grown on copper foil by chemical vapor deposition (CVD) through atomic layer deposition (ALD) technology, and studies the influence of key parameters and pretreatment steps in this process on the deposition effect. ### Main problem decomposition: 1. **Chemical inertness of the graphene surface**: Due to its sp² - hybridized carbon atom structure, graphene has very stable chemical properties, which makes it difficult to directly perform ALD deposition on its surface. The paper mentions that the untreated graphene surface lacks functional groups in the vertical direction, resulting in difficulty for ALD precursors to adsorb, thus affecting the uniformity and coverage of deposition. 2. **Optimization of ALD deposition conditions**: To overcome the above challenges, the paper studies different pretreatment methods, especially using deionized water (DI H₂O) to pretreat the graphene surface to increase its affinity for ALD precursors. In addition, the paper also explores the optimal temperature window during the ALD process and the influence of different thicknesses of Al₂O₃ layers on the properties of graphene. 3. **Characterization of the deposited layer**: The paper analyzes in detail the properties of the deposited Al₂O₃/graphene heterostructure through various characterization means (such as Raman spectroscopy, X - ray photoelectron spectroscopy, ellipsometer, atomic force microscope and scanning electron microscope), including its thickness, uniformity, morphology and chemical composition. ### Solutions: - **Deionized water pretreatment**: By pretreating the graphene surface with deionized water before ALD deposition, functional groups such as hydroxyl (- OH) can be introduced to improve the hydrophilicity of the graphene surface, thereby enhancing the adsorption and reaction of ALD precursors. - **Optimization of ALD deposition conditions**: 200°C has been determined as the optimal deposition temperature to obtain a uniform, transparent and dense Al₂O₃ film. A lower temperature will result in non - uniform and opaque films, while a higher temperature will produce non - stoichiometric films. - **Special treatment for multilayer graphene**: For double - layer or multilayer graphene, the paper selects a thicker Al₂O₃ coating (100 nm) to prevent the problem of non - uniform coverage caused by the increase in the number of layers. Through these methods, the paper has successfully deposited a uniform Al₂O₃ film on CVD - grown graphene and characterized it in detail, providing important technical support for the application of graphene in electronic devices.

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