Abstract:Thin Ga2O3 films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the precursors through plasma-enhanced atomic layer deposition. The depositions were made over a temperature range of 80-250 degrees C with a growth per cycle of around 0.07 nm/cycle. Surface self-saturating growth was obtained with TMG pulse time >= 20 ms at a temperature of 150 degrees C. The root mean square surface roughness of the obtained Ga2O3 films increased from 0.1 nm to 0.3 nm with increasing the growth temperature. Moreover, the x-ray photoelectron spectroscopy analysis indicated that the obtained film was Ga-rich with the chemical oxidation states Ga3+ and Ga1+, and no carbon contamination was detected in the films after Ar+ sputtering. The electron density of films measured by x-ray reflectivity varied with the growth temperature, increasing from 4.72 to 5.80 g/cm(3). The transmittance of Ga2O3 film deposited on a quartz substrate was obtained through ultraviolet visible (UV-Vis) spectroscopy. An obvious absorption in the deep UV region was demonstrated with a wide band gap of 4.6-4.8 eV. The spectroscopic ellipsometry analysis indicated that the average refractive index of the Ga2O3 film was 1.91 at 632.8 nm and increased with the growth temperature due to the dense structure of the films. Finally, the I-V and C-V characteristics proved that the Ga2O3 films prepared in this work had a low leakage current of 7.2 x 10(-11) A/cm(2) at 1.0 MV/cm and a high permittivity of 11.9, suitable to be gate dielectric.

Characterization of Al 2 O 3 Thin Films on GaAs Substrate Grown by Atomic Layer Deposition

Optical Properties of Al 2 O 3 Thin Film Fabricated by Atomic Layer Deposition

Characterization of Atomic-Layer-deposited Al2O3∕GaAs Interface Improved by NH3 Plasma Pretreatment

Growth Characteristics and Properties of Ga2O3 Films Fabricated by Atomic Layer Deposition Technique

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3 films on GaAs substrates

X-Ray Reflectometry and Spectroscopic Ellipsometry Characterization of Al2o3 Atomic Layer Deposition on Hf-Last and Nh3 Plasma Pretreatment Si Substrates

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

Characterizations of NbAlO Thin Films Grown by Atomic Layer Deposition

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Compact Ga2O3 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Chemical and electrical characterization of AL2O 3/gaas interface improved by NH3 plasma pretreatment

Effect of Deposition Temperature on Al2O3 Films Deposited by Atomic Layers Deposition

Structural, optical and morphological evolution of Ga2O3/Al2O3 (0001) films grown at various temperatures by pulsed laser deposition

Formation mechanism and photoelectric properties of Al2O3 film based on atomic layer deposition

Impacts of Oxygen Source on Band Alignment of ALD Al2O3/(α-, Ε-)Ga2o3 Interface

Heteroepitaxial growth of Ga2O3 thin films on Al2O3(0001) by ion beam sputter deposition

Heterogrowth of -(Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>)<sub>2</sub>O<sub>3</sub > Thin Films on Sapphire Substrates

Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer deposition

Growth and Characterization of Gd2O3 Thin Film on Si

Investigation of growth characteristics, compositions, and properties of atomic layer deposited amorphous Zn-doped Ga2O3 films