Abstract:The integration of two-dimensional (2D) materials with functional non-2D materials such as metal oxides is of key importance for many applications, but underlying mechanisms for such non-2D/2D interfacing remain largely elusive at the atomic scale. To address this, we here investigate the nucleation stage in atomic layer deposition (ALD) of the important metal oxide HfO2 on chemical vapor deposited graphene using atomically resolved and element specific scanning transmission electron microscopy (STEM). To avoid any deleterious influence of polymer residues from pre-ALD graphene transfers we employ a substrate-assisted ALD process directly on the as grown graphene still remaining on its Cu growth catalyst support. Thereby we resolve at the atomic scale key factors governing the integration of non-2D metal oxides with 2D materials by ALD: Particular to our substrate-assisted ALD process we find a graphene-layer-dependent catalytic participation of the supporting Cu catalyst in the ALD process. We further confirm at high resolution the role of surface irregularities such as steps between graphene layers on oxide nucleation. Employing the energy transfer from the scanning electron beam to in situ crystallize the initially amorphous ALD HfO2 on graphene, we observe HfO2 crystallization to non-equilibrium HfO2 polymorphs (cubic/tetragonal). Finally our data indicates a critical role of the graphene's atmospheric adventitious carbon contamination on the ALD process whereby this contamination acts as an unintentional seeding layer for metal oxide ALD nucleation on graphene under our conditions. As atmospheric adventitious carbon contamination is hard to avoid in any scalable 2D materials processing, this is a critical factor in ALD recipe development for 2D materials coating. Combined our work highlights several key mechanisms underlying scalable ALD oxide growth on 2D materials.

Atomic layer deposition of high-quality HFO2 film on graphene using low energy electron beam pretreatment

Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene.

A Facile Way to Deposit Conformal Al2O3 Thin Film on Pristine Graphene by Atomic Layer Deposition

Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers

Atomic-layer-deposited Nanostructures for Graphene-Based Nanoelectronics

Hydrophobic Surface Treatment and Interrupted Atomic Layer Deposition for Highly Resistive Al2O3 Films on Graphene

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Direct Deposition of Uniform High-Κ Dielectrics on Graphene.

Direct Growth of High-Quality Al2o3 Dielectric on Graphene Layers by Low-Temperature H2o-Based Ald

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Atomic Layer Deposition of Metal Oxides on Pristine and Functionalized Graphene

Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

Resolving the Nucleation Stage in Atomic Layer Deposition of Hafnium Oxide on Graphene

Preparation and Property of High-k HfO_2 Gate Dielectric Materials

The Post-Deposition Anneal Effects On The Electrical Properties Of Hfo2 Gate Dielectric Deposited By Ion Beam Sputtering At Room Temperature

Atomic layer deposition of Al2O3 and HfO2 for high power laser application

Atomic layer deposition of HfO2 on graphene from HfCl4 and H20

Atomic Layer Deposition of Metal Oxide Films

The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering

Atomic Layer Deposition Growth and Characterization of Al2O3 Layers on Cu-Supported CVD Graphene

Atomic layer deposition of high-k oxides on graphene