Abstract:The integration of two-dimensional (2D) materials with functional non-2D materials such as metal oxides is of key importance for many applications, but underlying mechanisms for such non-2D/2D interfacing remain largely elusive at the atomic scale. To address this, we here investigate the nucleation stage in atomic layer deposition (ALD) of the important metal oxide HfO2 on chemical vapor deposited graphene using atomically resolved and element specific scanning transmission electron microscopy (STEM). To avoid any deleterious influence of polymer residues from pre-ALD graphene transfers we employ a substrate-assisted ALD process directly on the as grown graphene still remaining on its Cu growth catalyst support. Thereby we resolve at the atomic scale key factors governing the integration of non-2D metal oxides with 2D materials by ALD: Particular to our substrate-assisted ALD process we find a graphene-layer-dependent catalytic participation of the supporting Cu catalyst in the ALD process. We further confirm at high resolution the role of surface irregularities such as steps between graphene layers on oxide nucleation. Employing the energy transfer from the scanning electron beam to in situ crystallize the initially amorphous ALD HfO2 on graphene, we observe HfO2 crystallization to non-equilibrium HfO2 polymorphs (cubic/tetragonal). Finally our data indicates a critical role of the graphene's atmospheric adventitious carbon contamination on the ALD process whereby this contamination acts as an unintentional seeding layer for metal oxide ALD nucleation on graphene under our conditions. As atmospheric adventitious carbon contamination is hard to avoid in any scalable 2D materials processing, this is a critical factor in ALD recipe development for 2D materials coating. Combined our work highlights several key mechanisms underlying scalable ALD oxide growth on 2D materials.

Atomic layer deposition of HfO2 on graphene from HfCl4 and H20

HfO2 Dielectric Film Growth Directly on Graphene by H2O-based Atomic Layer Deposition

Nucleation and growth of HfO$_2$ layers on graphene by CVD

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Ultra-thin HfAlO Nanofilms on Graphene Directly Deposited by Atomic Layer Deposition

Controlled Direct Growth of Al2O3-doped HfO2 Films on Graphene by H2O-based Atomic Layer Deposition.

Atomically Flat HfO2 Layer Fabricated by Mild Oxidation HfS2 with Controlled Number of Layers

Resolving the Nucleation Stage in Atomic Layer Deposition of Hafnium Oxide on Graphene

Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene

Atomic Layer Deposition of Hafnium Oxide from Tetrakis(ethylmethylamino)hafnium and Water Precursors

The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Atomic Layer Deposition of Hafnium Oxide from Hafnium Chloride and Water

Growth Mode Evolution of Hafnium Oxide by Atomic Layer Deposition

Plasma Enhanced Atomic Layer Deposition of HfO2 with in Situ Plasma Treatment

Microstructure and interfaces of HfO2 thin films grown on silicon substrates

Quantum Chemical Study of the Initial Surface Reactions of HfO2 Atomic Layer Deposition on the Hydroxylated GaAs(001)-4×2 Surface

Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene.

Surface Reaction Mechanism of Atomic Layer Deposition of Hfo2 on Ge(100)-2 X 1: A Density Functional Theory Study

Atomic Layer Deposition of HfS 2 on Functionalized Self-Assembled Monolayers on Ordered Oxide Surfaces: A Model Study under UHV Conditions