Abstract:The integration of two-dimensional (2D) materials with functional non-2D materials such as metal oxides is of key importance for many applications, but underlying mechanisms for such non-2D/2D interfacing remain largely elusive at the atomic scale. To address this, we here investigate the nucleation stage in atomic layer deposition (ALD) of the important metal oxide HfO2 on chemical vapor deposited graphene using atomically resolved and element specific scanning transmission electron microscopy (STEM). To avoid any deleterious influence of polymer residues from pre-ALD graphene transfers we employ a substrate-assisted ALD process directly on the as grown graphene still remaining on its Cu growth catalyst support. Thereby we resolve at the atomic scale key factors governing the integration of non-2D metal oxides with 2D materials by ALD: Particular to our substrate-assisted ALD process we find a graphene-layer-dependent catalytic participation of the supporting Cu catalyst in the ALD process. We further confirm at high resolution the role of surface irregularities such as steps between graphene layers on oxide nucleation. Employing the energy transfer from the scanning electron beam to in situ crystallize the initially amorphous ALD HfO2 on graphene, we observe HfO2 crystallization to non-equilibrium HfO2 polymorphs (cubic/tetragonal). Finally our data indicates a critical role of the graphene's atmospheric adventitious carbon contamination on the ALD process whereby this contamination acts as an unintentional seeding layer for metal oxide ALD nucleation on graphene under our conditions. As atmospheric adventitious carbon contamination is hard to avoid in any scalable 2D materials processing, this is a critical factor in ALD recipe development for 2D materials coating. Combined our work highlights several key mechanisms underlying scalable ALD oxide growth on 2D materials.

Nucleation and growth of HfO$_2$ layers on graphene by CVD

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Atomic layer deposition of HfO2 on graphene from HfCl4 and H20

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene.

Resolving the Nucleation Stage in Atomic Layer Deposition of Hafnium Oxide on Graphene

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Resolving the Controversial Existence of Silicene and Germanene Nanosheets Grown on Graphite.

The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering

Atomic-layer-deposited Nanostructures for Graphene-Based Nanoelectronics

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Epitaxial Growth of HfO2 Doped CeO2 Thin Films on Si(001) Substrates for High-Κ Application

Direct Growth of High-Quality Al2o3 Dielectric on Graphene Layers by Low-Temperature H2o-Based Ald

Different Nucleation Mechanisms during Atomic Layer Deposition of HfS2 on Cobalt Oxide Surfaces

Roles of Oxygen and Hydrogen in Crystal Orientation Transition of Copper Foils for High-Quality Graphene Growth

A Growth Mechanism for Graphene Deposited on Polycrystalline Co Film by Plasma Enhanced Chemical Vapor Deposition

Growth from Below: Bilayer Graphene on Copper by Chemical Vapor Deposition

HfO2 Dielectric Thickness Dependence of Electrical Properties in Graphene Field Effect Transistors with Double Conductance Minima

A Simple Method to Tune Graphene Growth Between Monolayer and Bilayer

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/Siox by Chemical Vapor Deposition