Abstract:As MOSFET devices are scaled down to below 100nm, the gate oxide thickness is required below 2nm. Conventional SiO2 gate dielectric will be replaced due to excessive leakage and poor reliabilit y. Thus, high dielectrics constant (K) gate dielectrics are being studied as an alternative. High-K dielectrics materials such as CeO2, Y2O3, Ta2O5, HfO2, ZrO2, TiO2, Al2O3, SrTiO3(STO), and BaSrTiO3(BST) have are studied . Among them, HfO2 is a promising candidate due to its thermodynamic stabil ity on Si, high dielectric constant ( 25), and relatively large band gap (5.68eV). In the paper, ultra-thin HfO2 gate dielectrics films were fabricated, electrical and reliabili ty properties such as capacitance-voltage (C-V), current-voltage (I-V), stress induce leakage current (SILC) effects and breakdown characteristics were studied. In the experiment, HfO2 capacitor samples have been fabricated using the following process. P-type (100) sili con substrates with 5-8 cm resistivity were cleaned using H2SO4:H2O2 (2:1) solution and HF dip. Thin HfO2 layers were following deposited at room temperature by ion beam sputtering a sintered HfO2 target. Then they were annealed under various temperatures and ambient. After annealing, Pt top electrodes were deposited by sputtering. The area of the capacitors was 5 10cm. The C-V and I-V curves were measured using HP4156B semiconductor parameter analyzer and Keithley590 C-V analyzer. Figure 1 shows the capacitance-voltage (C-V) curves of HfO2 gate dielectrics. The largest value of measured capacitance density in accumulation is Cmax/A=11.6fF/ m. The equivalent oxide thickness (EOT) is about 2.9nm. Comparing capacitances of various annealing temperatures, the capacitance of the sample annealed at 400 is highest. With increase annealed temperatures, EOT increased. Figure 2 shows the current-voltage (I-V) characteristics of HfO2 gate dielectrics. The leakage current of the sample annealed at 800 is lowest, which is about 3.09 10A/cm at –1.5V gate voltage. No distinct SILC effect is obtained. The leakage current of the sample annealed at 400 after 1×10C/cm stress has a very lit tle diversification. With increase annealed temperatures, the leakage current and SILC effect reduced. Figure 3 shows breakdown characteristics of HfO2 dielectrics. The breakdown electric field of HfO2 dielectrics is more than 2×10MV/cm. With increase annealing temperatures, the breakdown voltages decreased. Consequently, ultra-thin HfO2 gate dielectrics (EOT<3nm) were fabricated. All samples annealed under various temperatures and N2 ambient have good electrical characteristic and reliabili ty. With increase annealing temperatures, EOT of increased, the leakage current and SILC effect reduced, the breakdown voltages decreased. References: [1] E.P. Gusev, E. Carier, D.A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, and C.D. Emic, Microelectronic Engineering 59(2001) 341-349 [2] Wen-jie Qi, Renee Nieh, Byoung Hun Lee, Laegu Kang, Yongjoo Jeon, and Jack C. Lee, Applied Physics Letters, 2000, 77(20): 3269-3271 [3] G.D. Wilk, and R.M. Wallace, Applied Physics Letters, 1999, 74(19): 2854-2856 [4] Kevin X. Zhang, Carlton M. Osbun, IEEE Trans. Electron Devices, 42(12), 1995, 2181-2188 [5] G.D. Wilk, R.M. Wallace, J.M. Anthony, Applied Physics Review, 2001, 89(10): 5243-5275

Epitaxial Growth of HfO2 Doped CeO2 Thin Films on Si(001) Substrates for High-Κ Application

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Epitaxial Growth of CeO2 films on Si(100) Substrate and Its Electrical Properties

Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Electrical and Reliability Characteristics of High-Κ HfO 2 Gate Dielectrics

Epitaxial Growth and Characterization of Gd2O3-doped HfO2 Film on Ge (001) Substrates with Zero Interface Layer

Interfacial Properties of Hfo2 Dielectric Film on Ge Substrate

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation