Abstract:Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250°C on both Si and titanium nitride (TiN) substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films show a preferential orientation along 〈200〉 crystallographic direction for CeO2/Si or 〈111〉 for CeO2/TiN, as revealed by X-ray diffraction. Additionally, CeO2 films differ in the interface roughness depending on the substrate. Furthermore, the relative concentration of Ce3+ is 22.0% in CeO2/Si and around 18% in CeO2/TiN, as obtained by X-ray photoelectron spectroscopy (XPS). Such values indicate a ~10% off-stoichiometry and are indicative of the presence of oxygen vacancies in the films. Nonetheless, CeO2 bandgap energy and refractive index at 550nm are 3.54±0.63eV and 2.3 for CeO2/Si, and 3.63±0.18eV and 2.4 for CeO2/TiN, respectively. Our results extend the knowledge on the structural and chemical properties of ALD-deposited CeO2 either on Si or TiN substrates, underlying films differences and similarities, thus contributing to boost the use of CeO2 through ALD deposition as foreseen in a wide number of applications.

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Epitaxial Growth of CeO2 films on Si(100) Substrate and Its Electrical Properties

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Epitaxial Growth of CeO2(100) Films on Si(100) Substrates by Dual Ion Beams Reactive Sputtering

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