Abstract:Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250°C on both Si and titanium nitride (TiN) substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films show a preferential orientation along 〈200〉 crystallographic direction for CeO2/Si or 〈111〉 for CeO2/TiN, as revealed by X-ray diffraction. Additionally, CeO2 films differ in the interface roughness depending on the substrate. Furthermore, the relative concentration of Ce3+ is 22.0% in CeO2/Si and around 18% in CeO2/TiN, as obtained by X-ray photoelectron spectroscopy (XPS). Such values indicate a ~10% off-stoichiometry and are indicative of the presence of oxygen vacancies in the films. Nonetheless, CeO2 bandgap energy and refractive index at 550nm are 3.54±0.63eV and 2.3 for CeO2/Si, and 3.63±0.18eV and 2.4 for CeO2/TiN, respectively. Our results extend the knowledge on the structural and chemical properties of ALD-deposited CeO2 either on Si or TiN substrates, underlying films differences and similarities, thus contributing to boost the use of CeO2 through ALD deposition as foreseen in a wide number of applications.

Epitaxial Growth of CeO2 films on Si(100) Substrate and Its Electrical Properties

Investigation of Growth, Structural and Optical Properties of CeO2 Nanocrystalline Thin Films Prepared by Pulsed Spray-Evaporation Chemical Vapor Deposition (PSE-CVD)

Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition

Changes in the structural and optical properties of CeO2 nanocrystalline films: Effect of film thickness

Interfacial and Structural Characteristics of Ceo2 Films on Silicon with A Nitrided Interface Formed by Nitrogen-Ion-Beam Bombardment

Epitaxial Growth of CeO2(100) Films on Si(100) Substrates by Dual Ion Beams Reactive Sputtering

Epitaxial growth of CeO2(1 0 0) films on Si(1 0 0) substrates by dual ion beams reactive sputtering

Structural characteristics and the control of crystallographic orientation of CeO2 thin films prepared by laser ablation

Structural and electrical properties of CeO2/Si with nitrided interfacial layer by nitrogen ion beam bombardment

Low temperature growth of CeO2(111) layer on Si(100) using dual plasma deposition

Epitaxial Growth of HfO2 Doped CeO2 Thin Films on Si(001) Substrates for High-Κ Application

Epitaxial growth characteristics of oxide thin films prepared by pulsed laser deposition

Epitaxial Growth of Oxide Thin Films on (001) Metal Surfaces Using Pulsed-Laser Deposition

Structural and electrical properties of (110) ZnO epitaxial thin films on (001) SrTiO3 substrates

Influences of Ambient Oxygen Pressures on the Crystalline Orientation of CeO2/Si Thin Films Prepared by Pulsed Laser Deposition

Structural, chemical and optical properties of cerium dioxide film prepared by atomic layer deposition on TiN and Si substrates

Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si

Microstructure Evolution of Homoepitaxial MgO Layer and the Effect on the Growth Mode of CeO2 Film

Study On The Growth Of Crystalline Er2o3 Films On Si Substrates By Rheed Patterns

Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates

Substrate Temperatures and Gd2O3-Doped CeO2 Electrolyte Film Growth by Reactive RF Magnetron Sputtering