Influences of Ambient Oxygen Pressures on the Crystalline Orientation of CeO2/Si Thin Films Prepared by Pulsed Laser Deposition

LI Meiya,WANG Zhonglie,FAN Shoushan,ZHAO Qingtai,XIONG Guangcheng,LIN Kuixun
DOI: https://doi.org/10.3321/j.issn:1001-9731.2000.02.018
2000-01-01
Journal of Functional Biomaterials
Abstract:A series of CeO 2 thin films were deposited on Si(100) substrates at a series of deposition temperatures and oxygen pressures by pulsed laser deposition.X-ray diffraction of these films revealed that the crystalline orientations of the CeO 2 films grown at low oxygen pressures were (111) orientation,while that grown at a relative high oxygen pressures possessed (100) orientation.Oxygen pressure was found to be important to control the crystalline orientation of CeO 2 thin films,and these films showed an unique oxygen pressure dependence of the orientation.A possible mechanism of the dependence of the orientation of CeO 2 films on the oxygen pressure was proposed to explain these results.
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