Abstract:Bismuth ferrite (BiFeO(3)) nanocrystalline films with the crystalline size of 27-40 nm have been grown on c-sapphire substrates under various oxygen pressures of 1 × 10(-4) to 1 Pa by pulsed laser deposition. The X-ray diffraction spectra show that the films are polycrystalline and present the pure rhombohedral phase. It was found that the Raman-active phonon mode E(TO1) shifts towards a higher energy side from 74 to 76 cm(-1) with increasing oxygen pressure, indicating a larger tensile stress in the films deposited at higher oxygen pressure. The X-ray photoelectron spectroscopy analysis suggests that the concentrations of both Fe(2+) ions and oxygen vacancies in the BiFeO(3) films increase with decreasing oxygen pressure. Moreover, the dielectric functions in the photon energy range of 0.47-6.5 eV have been extracted by fitting the transmittance spectra with the Tauc-Lorentz dispersion model. From the transmittance spectra, the fundamental absorption edge is observed to present a redshift trend with increasing the temperature from 8 to 300 K. Note that the optical band gap (E(g)) decreases with increasing the temperature due to the electron-phonon interactions associated with the interatomic distance in the BiFeO(3) films. However, the E(g) decreases from 2.88 to 2.78 eV with decreasing oxygen pressure at 8 K, which can be attributed to the increment of oxygen vacancies leading to the formation of some impurity states between the valence and conduction band. It can be concluded that the oxygen pressure during the film fabrication has the significant effects on microstructure, optical properties, and electronic band structure modification of the BiFeO(3) films.

Oxygen Pressure Dependence Of Structure And Electrical Properties Of Pulsed Laser Deposited Ba(Fe(1/2)Nb(1/2))O(3) Thin Films

Effects of substrate temperature and ambient oxygen pressure on growth of Ba(Fe 1/2 Nb 1/2 )O 3 thin films by pulsed laser deposition

Effects of Oxygen Vacancy on Ferroelectricity in Ba(Fe1/2Nb1/2)O3 Thin Films Grown by Pulsed Laser Deposition

Effects of Oxygen Pressure on the Microstructures and Nanomechanical Properties of Samarium-Doped BiFeO3 Thin Films

Influences of oxygen pressure on optical properties and interband electronic transitions in multiferroic bismuth ferrite nanocrystalline films grown by pulsed laser deposition.

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Effect of Oxygen Pressure on Structural and Electrical Properties of Pulsed Laser Deposition-Derived Zn0.95mg0.05o: Li Thin Films

Effects of oxygen pressure on the c -axis oriented growth of LiNbO 3 thin film on SiO 2 /Si substrate by pulsed laser deposition

Influence of oxygen content on the structural and electrical characteristics of thin neodymium oxide gate dielectrics

Room Temperature Ferromagnetism of Amorphous MgO Films Prepared by Pulsed Laser Deposition

Effects of Chemical Fluctuations on Microstructures and Properties of Multiferroic Bifeo3 Thin Films

Influences of Ambient Oxygen Pressures on the Crystalline Orientation of CeO2/Si Thin Films Prepared by Pulsed Laser Deposition

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

The electrical and magnetic properties of epitaxial orthorhombic YMnO 3 thin films grown under various oxygen pressures

Microstructure, Optical, and Photoluminescence Properties of Β-Ga2o3 Films Prepared by Pulsed Laser Deposition under Different Oxygen Partial Pressures*

Effects of Oxygen Partial Pressure on the Properties of ZnO Thin Films Grown on Silicon (111) Substrate by Pulsed Laser Deposition

The effect of in situ annealing oxygen pressure on the ferroelectric resistive switching characteristic