Effects of Oxygen Partial Pressure on the Properties of ZnO Thin Films Grown on Silicon (111) Substrate by Pulsed Laser Deposition

何建廷,曹文田
DOI: https://doi.org/10.3969/j.issn.1001-2028.2009.04.016
2009-01-01
Abstract:ZnO thin films were deposited on n-type Si (111) substrates at various oxygen partial pressures by pulsed laser deposition (PLD) method. X-ray diffraction (XRD), Fourier transform infrared spectrophotometer (FTIR) and photoluminescence (PL) were used to analyze the crystalline and luminescence properties of the ZnO thin films deposited at various oxygen partial pressures. XRD shows that an optimal crystallized ZnO thin film is obtained at the oxygen particl pressure of 6.50 Pa. PL shows that the main emission peak at 380 nm is the strongest when oxygen partial pressure inereases from 0.13 pa to 6.50 Pa. The main emission peak decreases and the emission peaks related to oxygen vacancies disappear as the oxygen partial pressure go up to 13.00 Pa. It is concluded that the PL spectra of ZnO thin films are related to the oxygen pressures nearly.
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