Effect of oxygen partial pressure on microstructure, optical and electrical property of C-Al co-doped ZnO films

Shuang Yang,Huazhi Gu,Ao Huang

DOI: https://doi.org/10.1016/j.mssp.2021.105946

IF: 4.1

2021-10-01

Materials Science in Semiconductor Processing

Abstract:<p>C-Al co-doped ZnO films with superior optical and electrical property have been deposited at oxygen partial pressure range 1–7 Pa by pulse laser deposition. The influences of oxygen pressure on crystalline, optical and electrical property have been investigated. The C-Al co-doped ZnO films exhibit a superior crystallinity and greater grain size in the range of 1 Pa–3 Pa compared to AZO films. Furthermore, carbon doping at various oxygen partial pressure significantly improves the optical and electrical property. C-Al co-doped ZnO film reaches the lowest resistivity of 3.1×10^-4 Ω cm at 1 Pa. The average transmittance is higher than 85% and attains the optimal value of 89.9 %.</p>

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied