Effect of O2 Incorporation During the Channel Fabrication Process on Aluminum-Doped Zinc Oxide Thin-Film Transistor Characteristics
Jian Cai,Dedong Han,Youfeng Geng,Wei Wang,Liangliang Wang,Yu Tian,Lixun Qian,Xing Zhang,Shengdong Zhang,Yi Wang
DOI: https://doi.org/10.7567/jjap.52.04cf11
IF: 1.5
2013-01-01
Japanese Journal of Applied Physics
Abstract:High-performance aluminum-doped zinc oxide thin-film transistors (AZO TFTs) have been successfully fabricated on glass substrates. By controlling the oxygen flow ratio (OFR) during the deposition of an AZO active layer, we have demonstrated that the incorporation of oxygen in the deposition atmosphere plays an important role in improving the electronic performance of TFTs. For gate voltage VG = -2 to 5 V, the TFTs with an AZO active layer sputter deposited in an atmosphere of Ar and O2 mixture at room temperature (RT) as the channel layer exhibit much better properties than TFTs whose AZO layer was deposited in pure Ar atmosphere, such as a high saturation mobility (µsat) of 113 cm2 V-1 s-1, a positive threshold voltage Vth of 1.5 V, an improved steep subthreshold swing from 400 to 125 mV/decade, a decreased off-state current (Ioff) from 10-8 to 5×10-13 A, an increased on/off ratio from 105 to 109, and a higher transmittance of 82.5%.