Improved stability of dielectric/metal/dielectric-structured transparent conductive films with the insertion of Ni layer under thermal oxidation environment
Zhibo Zhang,Xinyu Zhang,Liangge Xu,Yanan Yang,Pingping Min,Ruicong Zhang,Lei Yang,Andrey Bolshakov,Jiaqi Zhu
DOI: https://doi.org/10.1016/j.matlet.2020.128844
IF: 3
2021-01-01
Materials Letters
Abstract:<p>Dielectric/metal/dielectric-structured transparent conductive films are prone to structural and functional failures under thermal oxidation environment. Herein, a Ni layer was employed to improve the photoelectric stability of AZO/Ag/AZO multilayer films. The AZO/Ni/Ag/AZO film exhibited a transmittance of 75%, surface resistance of ~7 Ω/sq, and stable structure after thermal oxidation treatment at 500 °C. The visible light transmittance, surface resistance, and figure of merit values of the AZO/Ag/AZO and AZO/Ni/Ag/AZO films were determined after high-temperature treatment in ambient air. The diffusion of Ag was effectively inhibited by the Ni layer, and the photoelectric stability of AZO/Ag/AZO films was improved under thermal environment.</p>
materials science, multidisciplinary,physics, applied