Abstract:Diluted magnetic semiconductors (DMS), in which some atoms of host semiconductors are randomly substituted by magnetic atoms, are regarded as key materials for spintronics because they have charge and spin degrees of freedom in a single substance. ZnO is a potential candidate for applications of spintronics devices since its possibility for room temperature ferromagnetism and its intrinsic excellent electrical properties. ZnO is also suitable for fabricating carrier controllable ferromagnetism because carrier-controlling techniques for ZnO have been well established. And among the methods used for deposition of thin films, PLD is effective and has the advantage that the ratios of the elemental components of the bulk and film are almost the same, even for chemically complex systems. In this paper, Zn 0.95 Co 0.05 O thin films were prepared by pulse laser deposition(PLD) on silicon(100) and quartz substrates. By optimizing the growth conditions, the Co-doped ZnO thin films obtained at temperature of 700 9C and oxygen pressure of 0.02 Pa showed magnetism even at room temperature. The X-ray diffraction patterns suggested that the obtained films showed c axis orientation preference, and Co related phases such as Co 2O 3 didn't appear, simply indicating that Co ions had been successfully doped into ZnO crystal lattices. SEM images showed that the films have dense surfaces with small roughness. The obtained sample was measured to have a hole concentration of ∼10 18 cm -3, a mobility of 18.7 cm 2 · V -1 · s -1, and a resistivity of about 0.04 Ω · cm, maintaining semiconductivity. And the magnetization of the Co-doped ZnO film can be measured at 12 K, even at room temperature.

Pressure controlled tunable magnetic, electrical and optical properties of (Cu, Li)-codoped ZnO thin films

Microstructure, surface morphology and optical properties of Na x Cu y Zn 1− x − y O thin films

Tunable Magnetic and Electrical Properties of Co-Doped Zno Films by Varying Oxygen Partial Pressure

Effect of Oxygen Pressure on Structural and Electrical Properties of Pulsed Laser Deposition-Derived Zn0.95mg0.05o: Li Thin Films

Electric and Magnetic Behaviors of Li and Co Codoped ZnO Thin Film on Si (100) Substrate

Growth Temperature Dependent Evolutions of Microstructural, Optical and Magnetic Properties of Zn0.75Co0.25O Films

Fabrication and Properties of Li-doped ZnCoO Diluted Magnetic Semiconductor Thin Films

Fabrication and magnetic properties of co-doped ZnO thin films by pulsed laser deposition

Control of P- and N-Type Conductivities in Li-Doped Zno Thin Films

Preparation and Photoluminescent Properties of P-Type Li-doped ZnMgO Thin Films

Effect of pressure on the elemental composition and magnetic properties of lithium-doped ZnO thin films

Fabrication of P-Type Li-Doped Zno Films by Pulsed Laser Deposition

Defect-induced Ferromagnetism in Insulating Mn–P Codoped ZnO Grown in Oxygen-Rich Environment

Influence of P-Type and N-Type Dopants on the Magnetic Properties of Zncuo Based Diluted Magnetic Semiconductor Thin Films

Magnetic and Transport Properties of (mn, Co)-Codoped Zno Films Prepared by Radio-Frequency Magnetron Cosputtering

Properties of Zn1-xCoxO thin films grown on silicon substrates prepared by pulsed laser deposition

Magnetic and Optical Properties of Zn1−xCoxO Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

Structural, optical and magnetic properties of Co-doped ZnO films

P-Type Behavior in Li-doped Zn0.9Mg0.1O Thin Films

A Facile Route to Realize P-Type ZnO Thin Films Via Li–F Codoping: Experiments and Theory

Effect of Oxygen Partial Pressure on the Local Structure and Magnetic Properties of Co-Doped Zno Films