Abstract:Diluted magnetic semiconductors (DMS), in which some atoms of host semiconductors are randomly substituted by magnetic atoms, are regarded as key materials for spintronics because they have charge and spin degrees of freedom in a single substance. ZnO is a potential candidate for applications of spintronics devices since its possibility for room temperature ferromagnetism and its intrinsic excellent electrical properties. ZnO is also suitable for fabricating carrier controllable ferromagnetism because carrier-controlling techniques for ZnO have been well established. And among the methods used for deposition of thin films, PLD is effective and has the advantage that the ratios of the elemental components of the bulk and film are almost the same, even for chemically complex systems. In this paper, Zn 0.95 Co 0.05 O thin films were prepared by pulse laser deposition(PLD) on silicon(100) and quartz substrates. By optimizing the growth conditions, the Co-doped ZnO thin films obtained at temperature of 700 9C and oxygen pressure of 0.02 Pa showed magnetism even at room temperature. The X-ray diffraction patterns suggested that the obtained films showed c axis orientation preference, and Co related phases such as Co 2O 3 didn't appear, simply indicating that Co ions had been successfully doped into ZnO crystal lattices. SEM images showed that the films have dense surfaces with small roughness. The obtained sample was measured to have a hole concentration of ∼10 18 cm -3, a mobility of 18.7 cm 2 · V -1 · s -1, and a resistivity of about 0.04 Ω · cm, maintaining semiconductivity. And the magnetization of the Co-doped ZnO film can be measured at 12 K, even at room temperature.

Effect of pressure on the elemental composition and magnetic properties of lithium-doped ZnO thin films

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Pressure controlled tunable magnetic, electrical and optical properties of (Cu, Li)-codoped ZnO thin films

Effect of Oxygen Pressure on Structural and Electrical Properties of Pulsed Laser Deposition-Derived Zn0.95mg0.05o: Li Thin Films

Room Temperature Ferromagnetism of Amorphous MgO Films Prepared by Pulsed Laser Deposition

d0 Ferromagnetism in Li-doped ZnO Compounds

Modulating the Electrical Properties of Lithium-Doped Zinc Oxide: Interplay of Lithium Content, Oxygen Pressure, and Temperature

Effect of Oxygen Vacancy Defect on the Magnetic Properties of Co-Doped Zno Diluted Magnetic Semiconductor

Mg doping effects on the microstructure and piezoelectric characteristics of ZnO:Li films deposited at room temperature using an RF sputtering deposition method

Oxygen Pressure-Tuned Epitaxy and Magnetic Properties of Magnetite Thin Films

Effect of Oxygen Partial Pressure on the Local Structure and Magnetic Properties of Co-Doped Zno Films

Fabrication and Properties of Li-doped ZnCoO Diluted Magnetic Semiconductor Thin Films

Room Temperature Ferromagnetic Pure Zno

Electrical and Magnetic Properties of ZnNiO Thin Films Deposited by Pulse Laser Deposition

Pressure effect on the structural, electronic, elastic, thermodynamic and optical properties of LiZnZ (Z = N, P, and As) Li-based half-Heusler

The Effects of Group-I Elements Co-Doping with Mn in ZnO Dilute Magnetic Semiconductor

Effect of Mg Content on Structural, Electrical, and Optical Properties of Li-doped Zn1−xMgxO Thin Films

Fabrication and magnetic properties of co-doped ZnO thin films by pulsed laser deposition

Optical and Electrical Properties of ZnO:Al Thin Films Synthesized by Low-Pressure Pulsed Laser Deposition

Effects of Sputtering Pressure on Properties of Al Doped Zno Thin Films Dynamically Deposited by Rf Magnetron Sputtering

Publisher’s Note:“Effect of pressure on the structural properties of Li [Li 0. Ni 0. 35 Mn 0. 55] O 2”[AIP Advances 5