Electrical and Magnetic Properties of ZnNiO Thin Films Deposited by Pulse Laser Deposition

Jie Jiang,Xue-tao Wang,Li-ping Zhu,Li-qiang Zhang,Zhi-guo Yang,Zhi-zhen Ye
DOI: https://doi.org/10.1631/jzus.a1000525
2011-01-01
Abstract:ZnNiO thin films with different contents of Ni (0–10 at.%) were fabricated on quartz and Si (100) substrates by pulsed laser deposition (PLD). We measured the samples by X-ray diffraction (XRD), field-emission scanning electron microscope (FE-SEM), X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectrometer (UV-VIS), and Hall testing. When the Ni contents were below 3 at.%, partial Zn2+ ions were replaced by the Ni2+ ions without forming any other phases, which enhanced the conductivity of the film. When the Ni contents were above 3 at.%, Ni ions were at the interstitial sites, and Ni-related clusters and defects were able to emerge in the films, resulting in a worsening of electrical and optical properties. A ferromagnetic hysteresis with a coercive force of approximately 30 Oe was observed in the ZnNiO film with a Ni content of 3 at.% at room temperature.
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