Abstract:The structural properties of a-HfO2/Ge(2 × 1)-(001) and a-ZrO2/Ge(2 × 1)-(001) interfaces were investigated with and without a GeOx interface interlayer using density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-HfO2 and a-ZrO2 samples were generated using a hybrid classical-DFT MD "melt-and-quench" approach and tested against experimental properties. The oxide/Ge stacks were annealed at 700 K, cooled to 0 K, and relaxed providing the system with enough freedom to form realistic interfaces. For each high-K/Ge stack type, two systems with single and double interfaces were investigated. All stacks were free of midgap states; however, stacks with a GeO(x) interlayer had band-edge states which decreased the band gaps by 0%-30%. These band-edge states were mainly produced by under-coordinated Ge atoms in GeO(x) layer or its vicinity due to deformation, intermixing, and bond-breaking. The DFT-MD simulations show that electronically passive interfaces can be formed either directly between high-K dielectrics and Ge or with a monolayer of GeO2 if the processing does not create or properly passivate under-coordinated Ge atoms and Ge's with significantly distorted bonding angles. Comparison to the charge states of the interfacial atoms from DFT to experimental x-ray photoelectron spectroscopy results shows that while most studies of gate oxide on Ge(001) have a GeO(x) interfacial layer, it is possible to form an oxide/Ge interface without a GeO(x) interfacial layer. Comparison to experiments is consistent with the dangling bonds in the suboxide being responsible for midgap state formation.

Epitaxial Growth and Characterization of Gd2O3-doped HfO2 Film on Ge (001) Substrates with Zero Interface Layer

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Interfacial Properties of Hfo2 Dielectric Film on Ge Substrate

Modulation of Band Offset in Sputtering-Derived MoS2/HfO2 Heterojunction by Gd Incorporation

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Growth of Cubic MgxZn1-xO Films and Characterization

Characterization of Hfo2/Al2o3 Gate Dielectric Nanometer-Stacks Grown by Atomic Layer Deposition on Ge Substrates

Epitaxial Growth of HfO2 Doped CeO2 Thin Films on Si(001) Substrates for High-Κ Application

Effect of film thickness on phase structure of epitaxial non-doped hafnium oxide films

Growth and Characterization of Gd2O3 Thin Film on Si

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation

Integration of (208) Oriented Epitaxial Hf-doped Bi4Ti3O12 with (0002) GaN Using SrTiO3/TiO2 Buffer Layer

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

Electrical Properties and Interfacial Studies of Hf x Ti1- xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates

Interfacial Structure in Epitaxial Perovskite Oxides on (001) Ge Crystal

Growth and Characterization of Homoepitaxial $β$-Ga$_2$O$_3$ Layers

Orientation-dependent Strain and Dislocation in HVPE-grown Α -Ga2o3 Epilayers on Sapphire Substrates

Geometrical Anatomy for Oxygen Vacancies in Epitaxial Hf0.5Zr0.5O2 Films Grown via Atomic Layer Deposition