Abstract:A new generation of compact and high-speed electronic devices, based on carbon, would be enabled through the development of robust gate oxides with sub-nanometer effective oxide thickness (EOT) on carbon nanotubes or graphene nanoribbons. However, to date, the lack of dangling bonds on sp2 oriented graphene sheets has limited the high precursor nucleation density enabling atomic layer deposition of sub-1 nm EOT gate oxides. It is shown here that by deploying a low-temperature AlOx (LT AlOx) process, involving atomic layer deposition (ALD) of Al2O3 at 50 °C with a chemical vapor deposition (CVD) component, a high nucleation density layer can be formed, which templates the growth of a high-k dielectric, such as HfO2. Atomic force microscopy (AFM) imaging shows that at 50 °C, the Al2O3 spontaneously forms a pinhole-free, sub-2 nm layer on graphene. Density functional theory (DFT) based simulations indicate that the spreading out of AlOx clusters on the carbon surface enables conformal oxide deposition. Device applications of the LT AlOx deposition scheme were investigated through electrical measurements on metal oxide semiconductor capacitors (MOSCAPs) with Al2O3/HfO2 bilayer gate oxides using both standard Ti/Pt metal gates as well as TiN/Ti/Pd gettering gates. In this study, LT AlOx was used to nucleate HfO2 and it was shown that bilayer gate oxide stacks of 2.85 and 3.15 nm were able to achieve continuous coverage on carbon nanotubes (CNTs). The robustness of the bilayer was tested through deployment in a CNT-based field-effect transistor (FET) configuration with a gate leakage of less than 10-8 A/μm per CNT.

The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering

Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene.

Integrating Functional Oxides with Graphene

HfO2 Dielectric Thickness Dependence of Electrical Properties in Graphene Field Effect Transistors with Double Conductance Minima

Atomic layer deposition of HfO2 on graphene from HfCl4 and H20

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Top oxide thickness dependence of remote phonon and charged impurity scattering in top-gated graphene

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Atomic-layer-deposited Nanostructures for Graphene-Based Nanoelectronics

Carrier Tuning of 2D Electron Gas in Field-Effect Devices Based on Al2O3/ZnO Heterostructures.

Sub-Nanometer Interfacial Oxides on Highly Oriented Pyrolytic Graphite and Carbon Nanotubes Enabled by Lateral Oxide Growth

Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric

Nucleation and growth of HfO$_2$ layers on graphene by CVD

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

Tunable-performance All-Oxide Structure Field-Effect Transistor Based Atomic Layer Deposited Hf-doped In2O3 Thin Films.

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Direct Growth of High-Quality Al2o3 Dielectric on Graphene Layers by Low-Temperature H2o-Based Ald

Integration of High-K Oxide on Mos2 by Using Ozone Pretreatment for High-Performance Mos2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga 2 O 3 MOSFET

Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators

Atomic layer deposition of high-quality HFO2 film on graphene using low energy electron beam pretreatment