Abstract:We have studied the mechanisms underpinning effective surface passivation of silicon with hafnium oxide (HfO2) thin films grown via atomic layer deposition (ALD). Plasma-enhanced ALD with O2 plasma and a tetrakis(dimethylamido)hafnium precursor was used to deposit 12 nm thick HfO2 films at 200 °C on high-lifetime 5 Ωcm n-type Czochralski silicon wafers. The passivation was activated by postdeposition annealing, with 30 min in air at 475 °C found to be the most effective. High-resolution grazing incidence X-ray diffraction measurements revealed the film crystallized between 325 and 375 °C, and this coincided with the onset of good passivation. Once crystallized, the level of passivation continued to increase with higher annealing temperatures, exhibiting a peak at 475 °C and yielding surface recombination velocities of <5 cm s−1 at 5 × 1014 cm−3 injection. A steady decrease in effective lifetime was then observed for activation temperatures >475 °C. By superacid repassivation, we demonstrated this reduction in lifetime was not because of a decrease in the bulk lifetime, but rather because of changes in the passivating films themselves. Kelvin probe measurements showed the films are negatively charged. Corona charging experiments showed the charge magnitude is of order 1012 qcm−2 and that the reduced passivation above 475 °C was mainly because of a loss of chemical passivation. Our study, therefore, demonstrates the development of highly charged HfO2 films and quantifies their benefits as a standalone passivating film for silicon-based solar cells.

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga 2 O 3 MOSFET

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

Surface Passivation Properties of ${\textrm{hfo}}_{2}$ Thin Film on N-Type Crystalline Si

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Interfacial and Electrical Characteristics of Tetragonal HfO2/Al2O3 Multilayer Grown on AlGaN/GaN

Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films

Improved High-Temperature Device Transport Properties and Off-State Characteristics of Algan/Gan Power Devices with Atomic Layer Deposition (ald) Hfalo High-K Dielectric

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Characterization of High-κ Nanolaminates of HfO2 and Al2O3 Used as Gate Dielectrics in pMOSFETs

Effects of Hafnium Oxide on Surface Potential and Drain Current Models for Subthreshold Short Channel Metal–Oxide–Semiconductor-Field-Effect-Transistor

Comparison Of The Interfacial And Electrical Properties Of Hfalo Films On Ge With S And Geo2 Passivation

High Performance Atomic-Layer-Deposited \(LaLuO_3/Ge\)-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Thermally Grown \(GeO_2\) as Interfacial Passivation Layer

Effective electrical passivation of Ge(100) for HfO 2 gate dielectric layers using O 2 plasma

Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions

Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ As Gate Dielectric

Effect of Gate Voltage Stress on InGaAs MOSFET with HfO 2 or Al 2 O 3 Dielectric