Abstract:The reliability performance of InxGa1-xAs n-MOSFETs with Al2O3 gate dielectric under positive-bias temperature instability stress is investigated. The following new phenomena are demonstrated: 1) There are high densities of fast interface traps Nit and slow oxide border traps NSOX near the interface between InGaAs and Al2O3. The border traps are more fragile under stress, and therefore, the stress mainly induces border traps. 2) The stress-induced border traps consist of permanent acceptor traps and recoverable donor traps. Acceptor trap energy density ΔDSOXAcceptor(E) is mainly distributed above the conduction band edge Ec of InGaAs with a tail extending to the midgap, whereas donor trap energy density ΔDSOXDonor(E) has a large distribution inside the InGaAs energy gap with a tail extending to the conduction band. 3) Flicker noise variation after stress and its correlation to the acceptor and donor trap generation and recovery are demonstrated. 4) The recoverable donor traps induce the subthreshold slope and off-current degradation in the stress phase and recover in the recovery phase and also induce continuous degradation of on-current in the recovery phase. The permanent acceptor traps induce the transconductance and on-current degradation. The long-term device lifetime is mainly determined by the generation rate of the acceptor traps. 5) Comprehensive comparison between the Si and InGaAs MOSFETs' degradation behaviors under bias temperature instability stress is presented. The physical recovery of donor oxide traps in dielectric in InGaAs/Al2O3 has never been observed in a Si MOS structure, deserving special attention and further investigation.

Effect of Gate Voltage Stress on InGaAs MOSFET with HfO 2 or Al 2 O 3 Dielectric

Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Defect Evaluation in InGaAs Field Effect Transistors with HfO2 or Al2O3 Dielectric

Effects of Positive and Negative Stresses on III-V MOSFETs With Al2O3 Gate Dielectric

Reliability of High-Mobility InGaAs Channel N-Mosfets under BTI Stress

Effects of Positive and Negative Stresses on III–V MOSFETs With Gate Dielectric

Characterization of High-κ Nanolaminates of HfO2 and Al2O3 Used as Gate Dielectrics in pMOSFETs

Investigation of Stress Induced Interface States in Al2o3/Ingaas Metal-Oxide-Semiconductor Capacitors

Characterization of high-kappa nanolaminates of HfO2 and Al2O3 used as gate dielectrics in pMOSFETs

Impact of Ald Gate Dielectrics (sio2, Hfo2, and Sio2/Hah) on Device Electrical Characteristics and Reliability of Algan/Gan Moshfet Devices

Characterization of High-κ Nanolaminates of HfO 2 and Al 2 O 3 Used As Gate Dielectrics in Pmosfets

High Performance Submicron Inversion-Type Enhancement-Mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO As Gate Dielectrics

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Positive Bias Temperature Instability Degradation of InGaAs N-Mosfets with Al2O3 Gate Dielectric

High-performance Inversion-type E-mode In0.65Ga0.35As MOSFETs with ALD HfO2 as Gate Dielectric

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Effects Of Channel Hot Carrier Stress On Iii-V Bulk Planar Mosfets

Experimental Investigation on Threshold Voltage Instability for β-Ga 2 O 3 MOSFET Under Electrical and Thermal Stress

Degradation of AlGaN/GaN Metal–insulator–semiconductor High Electron Mobility Transistors under Off-State Electrical Stress

Degradation of Polycrystalline Hfo2-Based Gate Dielectrics under Nanoscale Electrical Stress

Effects of Channel Hot Carrier Stress on III&#x2013;V Bulk Planar MOSFETs