Abstract:In replacing the conventional SiO2 gate dielectric with high-κ materials, new challenges emerge on understanding the kinetics of dielectric breakdown due to the different properties of the new bulk oxide and the interfacial layers at the substrate and gate electrode interface as well. Among several complexities, dielectric relaxation and recovery have received a lot of attention due to their promising applications in resistive random access memory (RRAM). In this study, we explore the stochastic nature of hard breakdown recovery in HfO2, taking advantage of ramped voltage stress (RVS) measurements, which are theoretically equivalent to the widely used constant voltage stress (CVS), while being significantly less time-consuming. We found that the possibility of recovery is largely dependent on the ramp rate during RVS as the dielectric needs adequate time and sufficient thermal budget to recover. The clustering model is found to be a good fit to the RVS data sets for post-recovery subsequent breakdown events and the extent of defect clustering is found to be more intense after increasing number of recovery events. The breakdown mechanism in the stack is confirmed by measuring the resistance change trends with temperature.

Degradation of Polycrystalline Hfo2-Based Gate Dielectrics under Nanoscale Electrical Stress

Degradation of polycrystalline HfO<sub>2</sub>-based gate dielectrics under nanoscale electrical stress

Publisher’s Note: “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress” [Appl. Phys. Lett. 99, 103510 (2011)]

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Observation Of Degradation And Recovery Of Stacked Hfox/Zroy/Hfox Mosfets

Thermal and Voltage Instabilities of Hafnium Oxide Films Prepared by Sputtering Technique

Localized Breakdown in Dielectrics and Macroscopic Charge Transport Through the Whole Gate Stack: A Comparative Study

Comparison of Degradation and Recovery of SiONx and Hf-Based Dielectric under Electrical-Field Stress

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Breakdown Characteristics of HfO2 Gate Dielectrics Films Under Constant Current Stress

Electrode Material Dependent Breakdown And Recovery In Advanced High-Kappa Gate Stacks

Scalability And Reliability Characteristics Of Cvd Hfo2 Gate Dielectrics With Hfn Electrodes For Advanced Cmos Applications

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Stress induced leakage current and time dependent dielectric breakdown characteristics of ultra-thin HFO2 gate dielectrics

Effect of Gate Voltage Stress on InGaAs MOSFET with HfO 2 or Al 2 O 3 Dielectric

Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films

Effect of Gate Electrodes on Structure and Electrical Properties of Sputtered Hfo2 Thin Films

Impact of Gate Materials on Positive Charge Formation in HfO2∕SiO2 Stacks