Breakdown Characteristics of HfO2 Gate Dielectrics Films Under Constant Current Stress

韩德栋,康晋锋,王成钢,刘晓彦,韩汝琦,王玮
DOI: https://doi.org/10.3969/j.issn.1674-4926.2004.08.024
2004-01-01
Abstract:Ultra-thin high-k HfO2 gate dielectrics films are fabricated by reacting magnetron sputtering and furnace annealing. Breakdown characteristics (soft breakdown and hard breakdown) of gate dielectrics are studied. Results show that breakdown characteristic of thin gate dielectrics is different from that of thick gate dielectrics. Thus, breakdown mechanism of gate dielectrics under constant current stress is studied.
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