Abstract:V-ramp method was used to evaluate gate oxide reliability of 0.18μm dual gate CMOS process. Charge of breakdown (Q- bd ) and voltage of breakdown (V- bd ) of gate oxide with n-type substrate and p-type substrate were extracted. It was found that for low voltage (thin oxide) gate oxide device the Q- bd of gate oxide of n-type substrate and p-type substrate are almost the same, but for high voltage (thick oxide) gate oxide device the Q- bd of n-type substrate and p-type substrate have a big difference. At the same time, Q- bd of gate oxide with p-substrate is bigger than that of gate oxide with n-substrate. The difference of Q- bd of thin gate oxide and thick gate oxide can be attributed to lithographic damage to the interface of poly-silicon gate and thick gate oxide. There is a big difference between the Weibull slopes of charge of breakdown of thin oxide and thick oxide. For the voltage of breakdown, Similar difference between n-substrate and p-substrate gate oxide was also observed. However, there is no big difference between the Weibull slopes of voltage of breakdown of thin oxide and thick oxide.

Electrical Characteristics of 3-6nm Ultra-Thin Gate Oxide

Investigation Of Ultra-Thin Sio2 Gate Oxide Characteristics

Investigation of ultra-thin SiO/sub 2/ gate oxide characteristics

Experimental Research on Breakdown Characteristics of Thin Gate Oxide

Charge to Breakdown of Thin Gate Oxides

Substrate and process dependence of gate oxide reliability of dual gate CMOS process

Substrate and Process Dependence of Gate Oxide Reliability of 0.18μm Dual Gate CMOS Process

Soft Breakdown Characteristics of Ultra-thin High-K HfO2 Gate Dielectrics

Study on Parameter Characterization of Thin Gate Oxide Tddb Breakdown

Breakdown Characteristics of HfO2 Gate Dielectrics Films Under Constant Current Stress

The Breakdown Characteristics of Ultra-Thin Gate Oxide N-Mosfet under Voltage Stress

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Electrical Signature of the Defect Associated with Gate Oxide Breakdown

Breakdown Voltage of Ultrathin Dielectric Film Subject to Electrostatic Discharge Stress

Breakdown Characteristics of N2O-Annealed H2-O2 Grown Thin Gate Oxide

Substrate Hot Holes Injection Induced Breakdown Characteristics of Thin Gate Oxides

Degradation of Ultra-Thin Gate Oxide Nmosfets under Cvdt and She Stresses

TDDB Characteristics of Ultra-Thin HfN/HfO/sub 2/ Gate Stack

Study on Ultra-Thin Gate Dielectrics: Surface Preparation and Reliability

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Breakdown Protection Characteristics for F and N Implanted Ultra-Thin Gate Oxide