Conductivity to Soft Failure of N-O-Si Thin Film Used in Nanometer Device

Mingzhen Xu,Changhua Tan,Yandong He,Xiaorong Duan
DOI: https://doi.org/10.3969/j.issn.1674-4926.2005.z1.033
2005-01-01
Abstract:The properties of conductivity at soft failure are studied under constant voltage stress. It is experimentally shown that the logarithm of the conductivity as well as time-to-breakdown follows a reciprocal temperature dependence and a single path conductivity-to-breakdown and time-to-breakdown are also strongly correlated, and obey a simple anti-symmetrical law. They can be explained by stress induced defect conduction mechanism.
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