Abstract:Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size leading to ultrahigh-resonance frequencies and extreme surface-to-volume ratios, silicon NWs raise new opportunities regarding sensitivity, precision, and speed in both physical and biochemical sensing. With silicon optoelectromechanical properties strongly dependent on the level of NW intrinsic stress, various studies have been devoted to the measurement of such stresses generated, for example, as a result of harsh fabrication processes. However, due to enormous NW surface area, even the native oxide that is conventionally considered as a benign surface condition can cause significant stresses. To address this issue, a combination of nanomechanical characterization and atomistic simulation approaches is developed. Relying only on low-temperature processes, the fabrication approach yields monolithic NWs with optimum boundary conditions, where NWs and support architecture are etched within the same silicon crystal. Resulting NWs are characterized by transmission electron microscopy and micro-Raman spectroscopy. The interpretation of results is carried out through molecular dynamics simulations with ReaxFF potential facilitating the incorporation of humidity and temperature, thereby providing a close replica of the actual oxidation environment-in contrast to previous dry oxidation or self-limiting thermal oxidation studies. As a result, consensus on significant intrinsic tensile stresses on the order of 100 MPa to 1 GPa was achieved as a function of NW critical dimension and aspect ratio. The understanding developed herein regarding the role of native oxide played in the generation of NW intrinsic stresses is important for the design and development of silicon-based NEMS.

Internal Stresses and Formation of Switchable Nanowires at Thin Silica Film Edge

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Lattice Bending, Disordering, and Amorphization Induced Plastic Deformation in a SiC Nanowire

TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires

Silicon Nano-Wires Fabricated by a Novel Thermal Evaporation of Zinc Sulfide

Dynamics behavior and defects evolution of silicon nitride nanowires under tension and compression load: A molecular dynamics study

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

In situ nano-thermo-mechanical experiment reveals brittle to ductile transition in silicon nanowires.

Substrate-Induced Stress In Silicon Nanocrystal/Sio2 Multilayer Structures

Mechanical properties of Si nanowires as revealed by in situ transmission electron microscopy and molecular dynamics simulations.

Morphology Instability of Silicon Nitride Nanowires

Turning Low-Nanoscale Intrinsic Silicon Highly Electron-Conductive by SiO2 Coating

Amorphous Layer Coating Induced Brittle to Ductile Transition in Single Crystalline Sic Nanowires: an Atomistic Simulation

On the large-strain plasticity of silicon nanowires: Effects of axial orientation and surface

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Crystal Growth of Si Nanowires and Formation of Longitudinal Planar Defects

Mechanical Properties of Silicon Nanowires with Native Oxide Surface State

Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface

Structural Evolution of the Silicon Nanowire Via Molecular Dynamics Simulations: the Double-Strand Atomic Chain and the Monatomic Chain

Mechanical tensile behavior-induced multi-level electronic transport of ultra-thin SiC NWs