Abstract:Thin HfTiO gate dielectric is deposited by reactive co-sputtering method followed by wet or dry N2 anneal. The effects of Ti content on the performance of HfTiO gate dielectric are investigated by using different sputtering powers for the Ti target. Experimental results indicate that as the Ti content increases, the dielectric constant (κ) can increase up to 40 for a Ti content of 28%. However, when the Ti content is too high, the interface properties and gate leakage properties are deteriorated. On the contrary, results show that owing to the hydrolyzable property of GeOx, the wet-N2 anneal can greatly suppress the growth of unstable low-κ GeOx interlayer, resulting in lower interface-state density and gate leakage current, in addition to larger κ value. In this study, when the sputtering power of the Ti target is 80W together with a 25-W power for the Hf target and a post-deposition anneal (PDA) in wet-N2 ambient at 500°C for 300s, excellent device performance is achieved: equivalent oxide thickness of 0.72nm, equivalent dielectric constant of 39, interface-state density of 6.5×1011eV−1cm−2 and gate leakage current of 5.7×10−4A/cm2 at Vg=1V. Therefore, in order to obtain high-quality HfTiO gate dielectric for small-scaled Ge MOS devices, not only should the Ti content be optimized, the PDA should also be done in a wet-N2 ambient.

Breakdown Characteristics of N2O-Annealed H2-O2 Grown Thin Gate Oxide

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Breakdown Protection Characteristics for F and N Implanted Ultra-Thin Gate Oxide

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Gate Oxide Reliability Degradation by Post Poly-Silicon Annealing and Suppression Method

Electrical Characteristics of 3-6nm Ultra-Thin Gate Oxide

Impact of Post-Nitridation Annealing on Ultra-Thin Gate Oxide Performance

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

High-quality Germanium Dioxide Thin Films with Low Interface State Density Using a Direct Neutral Beam Oxidation Process

Influence of oxygen content on the structural and electrical characteristics of thin neodymium oxide gate dielectrics

Breakdown Characteristics of HfO2 Gate Dielectrics Films Under Constant Current Stress

Effect of Ramping Anneals under Inert or Oxidizing Ambient on the Formation of Oxygen Precipitate Denuded Zone in Nitrogen‐doped Czochralski Silicon Wafers

Reliability of 4H-Sic (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

Study on Ultra-Thin Gate Dielectrics: Surface Preparation and Reliability

Simulation and analysis of high breakdown voltage AlGaN/GaN MOSHEMTs with TiO2/Al2O3 gate dielectric

The Study of Preparation and Relibility of the Ultra-thin Oxide

High V th and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN