Abstract:Fundamental processes for electric breakdown, i.e., electrode emission and bulk ionization, as well as the resultant Paschen's law, are reviewed under various conditions. The effect of the ramping rate of applied voltage on breakdown is first introduced for macroscopic gaps, followed by showing the significant impact of the electric field nonuniformity due to gap geometry. The classical Paschen's law assumes uniform electric field; a more general breakdown scaling law is illustrated for both DC and RF fields in geometrically similar gaps, based on the Townsend similarity theory. For a submillimeter gap, effects of electrode surface morphology with local field enhancement and electric shielding on the breakdown curve are discussed, including the most recent efforts. Breakdown characteristics and scaling laws in microgaps with both metallic and non-metallic (e.g., semiconductor) materials are detailed. For gap distance down to micro/nano scales, the breakdown characteristics and the breakdown mode transition from the secondary electron emission to the electric field emission or thermionic emission dominant regime. Additionally, the combined thermo-field emission regime is also reviewed. Previous efforts, including key simulations and experiments, have been devoted to diagnosing breakdown path evolution, measuring breakdown fields, and quantifying breakdown dependence on frequencies for gaps down to micro/nano scales. By summarizing and analyzing fundamental theories, recent progress, and on-going challenges, this tutorial review seeks to provide basic understanding and the state of the art of electric breakdown, which aids in advancing discoveries and promoting application prospects for discharge devices engineered in a wide range of regimes.

Localized Breakdown in Dielectrics and Macroscopic Charge Transport Through the Whole Gate Stack: A Comparative Study

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Degradation of polycrystalline HfO<sub>2</sub>-based gate dielectrics under nanoscale electrical stress

Degradation of Polycrystalline Hfo2-Based Gate Dielectrics under Nanoscale Electrical Stress

Electrode Material Dependent Breakdown And Recovery In Advanced High-Kappa Gate Stacks

TDDB Characteristics of Ultra-Thin HfN/HfO/sub 2/ Gate Stack

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.

Breakdown Voltage of Ultrathin Dielectric Film Subject to Electrostatic Discharge Stress

Stress induced leakage current and time dependent dielectric breakdown characteristics of ultra-thin HFO2 gate dielectrics

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Hot Electron Transport in Au–HfO2–SiO2–Si Structures Studied by Ballistic Electron Emission Spectroscopy

Scalability And Reliability Characteristics Of Cvd Hfo2 Gate Dielectrics With Hfn Electrodes For Advanced Cmos Applications

The interfaces of lanthanum oxide-based subnanometer EOT gate dielectrics.

Current Conduction And Stability Of Ceo2/La2o3 Stacked Gate Dielectric

A Thorough Study of Quasi-Breakdown Phenomenon of Thin Gate Oxide in Dual-Gate CMOSFET's

Breakdown-limited endurance in HZO FeFETs: mechanism and improvement under bipolar stress

Probing Gate Dielectrics for Two-Dimensional Electronics at Atomistic Scale Using Transmission Electron Microscope

Electrical breakdown from macro to micro/nano scales: a tutorial and a review of the state of the art

Effects of gate material on Fowler-Nordheim stress induced thin silicon dioxide degradation under negative gate bias

Evaulation the Degradation in Nmosfets with HfO2 Gate Dielectric and Interfacial Layer by 3D Kinetic Monte-Carlo Method

A Nanoscale Analysis Of The Leakage Current In Sio(2) Breakdown