Abstract:A comprehensive quantitative root cause study of defect evolution leading to memory window closure from a charge balance and charge trapping perspective throughout all phases of a Si channel Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect-transistor (FEFET) is reported. Starting with the first write pulse, an excessive SiO2 interlayer field is revealed that triggers the creation of defect levels Dit in excess of 1015 cm−2 eV−1 at the HZO–SiO2 interface screening ferroelectric (FE) polarization while enabling FE switching. Under subsequent early bipolar fatigue cycling (up to 104 cycles), defect creation commences at the SiO2–Si interface due to the high injected hole fluence (0.39 C/m2) during each stress pulse causing negative bias instability (NBI), which shifts the threshold voltage of the erase state VT,ERS by −0.3 V with accrual of permanently captured charge Nit of up to +5 × 10−3 C/m2 (3 × 1012 cm−2). Subsequently, Nit NBI generation at the SiO2–Si interface accelerates reaching levels of +7 × 10−2 C/m2, locking both FEFET program and erase drain current vs gate–source-voltage (ID–VGS) characteristics in the FEFET on-state inducing memory window closure at 105 cycles while FE switching (switched polarization Psw = 0.34 C/m2) remains essentially intact. These findings guide the down-selection toward suitable semiconductor/FE systems for charge balanced, reliable, and high endurance FEFETs.

Breakdown-limited endurance in HZO FeFETs: mechanism and improvement under bipolar stress

Experimental Investigation of Time Dependent Dielectric Breakdown and Failure Mechanism for Hf0.5Zr0.5O2 Ferroelectric Field Effect Transistors

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses

Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics under Both Forward and Reverse Stress Conditions

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

The origin of memory window closure with bipolar stress cycling in silicon ferroelectric field-effect-transistors

Robust Breakdown Reliability and Improved Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Using Grain Boundary Interruption

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Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETs

Dielectric breakdown behavior of ferroelectric HfO2 capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.

Deep insights into dielectric breakdown in tunnel FETs with awareness of reliability and performance co-optimization

GHz AC to DC TDDB Modeling with Defect Accumulation Efficiency Model

The Jumping Dielectric Breakdown Behavior Induced by Crack Propagation in Ferroelectric Materials: A Phase Field Study

Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ $\textit{V}_{\text{th}}$ Measurement

Breakdown Characteristics of HfO2 Gate Dielectrics Films Under Constant Current Stress

Stress induced leakage current and time dependent dielectric breakdown characteristics of ultra-thin HFO2 gate dielectrics

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Localized Breakdown in Dielectrics and Macroscopic Charge Transport Through the Whole Gate Stack: A Comparative Study

Electrode Material Dependent Breakdown And Recovery In Advanced High-Kappa Gate Stacks