Abstract:Generally, the ferroelectric capacitance under a d.c. voltage drops continuously with time, and the shape of capacitance–voltage (C–V) loops within a sweeping time more than 1 s resemble a butterfly, in comparison to the double-butterfly shape of an antiferroelectric. In this work, we developed a measuring technique for shortening sweeping time down to 500 ns for the rapid study of dielectric relaxation in ferroelectric Pb(Zr,Ti)O3 thin films. It is interestingly found that the traditional butterfly loops of a ferroelectric degenerate into double butterfly loops of an antiferroelectric when the sweeping time is sufficiently short, providing evidence of the nonlinear dielectric contribution of reversible domain motion. Reversible domains can align along a field under a voltage, but reverses back immediately into their previous directions under a reduced field strength to release their polarization charges, similarly to antiferroelectric domains. When the voltage stressing time is sufficiently long, the internal field for driving reversible domain motion is temporally screened by the injected charges accumulated in regions with different polarizations, dielectric permittivities, and conductivities (domain pinning), which results in time-dependent dielectric degradation. This charge injection is different from the traditional model of defect motion with a low mobility. Finally, we showed evidence of the charge injection from the imprint profile and reversible domain freezing into irrecoverable domains upon cooling.

Dielectric breakdown behavior of ferroelectric HfO2 capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

Non-Destructive Imaging of Breakdown Process in Ferroelectric Capacitors Using \textit{In-situ} Laser-Based Photoemission Electron Microscopy

Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

Model of Dielectric Breakdown in Hafnia-Based Ferroelectric Capacitors

Experimental Investigation of Time Dependent Dielectric Breakdown and Failure Mechanism for Hf0.5Zr0.5O2 Ferroelectric Field Effect Transistors

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses

Breakdown-limited endurance in HZO FeFETs: mechanism and improvement under bipolar stress

Observation and Characterization of Recoverable Fatigue Process Under Low-Electric Field (<1.8MV/cm) in HfZrO Ferroelectric Film

Time dependent dielectric breakdown (TDDB) characteristics of metal-oxide-semiconductor capacitors with HfLaO and HfZrLaO ultra-thin gate dielectrics

Direct imaging of asymmetric interfaces and electrostatic potentials inside a hafnia-zirconia ferroelectric nanocapacitor

Characterization of Ferroelectric Characteristics for Hafnium Zirconium Oxide Capacitors with Refractory Electrodes

Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics under Both Forward and Reverse Stress Conditions

Demonstration of Robust Breakdown Reliability and Enhanced Endurance in Gallium Doped HfO2 Ferroelectric Thin Films

Investigation of Coercive Field Shift During Cycling in HfZrO ₓ Ferroelectric Capacitors

Impact of Electric Field Pulse Duration on Ferroelectric Hafnium Zirconium Oxide Thin Film Capacitor Endurance

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

Time Dependent Dielectric Breakdown (TDDB) Characteristics of Metal–oxide–semiconductor Capacitors with HfLaO and HfZrLaO Ultra-Thin Gate Dielectrics

Electric field cycling behavior of ferroelectric hafnium oxide

Dielectric Degradation and Reversible Domain Motion in Ferroelectric Thin Films Evidenced by Double-Butterfly Capacitance–Voltage Loops with Sweeping Times from 500 Ns to 1 S

Robust Breakdown Reliability and Improved Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Using Grain Boundary Interruption

Thermal Induced P r Degradation Under Low-Voltage Operation in HfZrO Ferroelectric Film: Phenomenon and Underlying Mechanism