Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

Yaru Ding,Yuetong Huo,Chu Yan,Zeping Weng,Jianguo Li,Zhangsheng Lan,Yiming Qu,Yi Zhao

DOI: https://doi.org/10.1109/cstic61820.2024.10531963

2024-01-01

Abstract:The anti-ferroelectric HfZrO oxide has drawn attention due to its non-volatile characteristics (with a build-in bias) and high dielectric constant which is very important for DRAM applications. Therefore, understanding the evolution of P-V curves during the endurance cycling becomes crucial for evaluating the reliability behaviors of anti - ferroelectric HfZrO capacitors. In this work, we developed an endurance degradation model of anti-ferroelectric HfZrO capacitors. The proposed degradation model demonstrates excellent prediction capability for P-V curve evolution during the endurance cycling with different stress amplitudes.