Abstract:The domain is an important characteristic of ferroelectric materials, and the type of domain can have significant effects on the performance of ferroelectric materials. In particular, the unique wake-up and fatigue effects of Hf0.5Zr0.5O2 (HZO) films severely restrict improvements in terms of film performance. Recently, using integrated differential phase contrast (iDPC) scanning transmission electron microscopy (STEM) imaging, we observed the existence of intrinsic tail-to-tail 90° domain structures, charged domain walls (CDWs), and polarization relaxation on the TiN/HZO/TiN interfaces of HZO films. Based on this experimental investigation, we establish a phase-field model of the tail-to-tail 90°CDWs based on the time-dependent Ginzburg–Landau equation. In our model, the tail-to-tail 90°CDW affects the mesoscopic domain switching through a built-in electric field, which, in turn, affects the macroscopic ferroelectric properties of the thin film. The following conclusions are drawn: (a) the CDWs that are distributed horizontally or vertically along the thickness of the film cause a A-wake-up effect (antiferroelectric-like wake-up) with double hysteresis loops or a S-wake-up effect (spindle-like wake-up), with thick portions in the middle and both ends points of the hysteresis loop; (b) the S-wake-up caused by the CDWs distributed along the thickness of the film performs badly in fatigue tests and is easier to break down. The model proposed herein reveals the mechanism of the wake-up effect in hafnium oxide-based ferroelectric films. It provides a theoretical basis for the development of a new type of hafnium oxide-based ferroelectric memory system.

Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics under Both Forward and Reverse Stress Conditions

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses

Experimental Investigation of Time Dependent Dielectric Breakdown and Failure Mechanism for Hf0.5Zr0.5O2 Ferroelectric Field Effect Transistors

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Excellent Reliability in Hf0.5Zr0.5O2 Based Ferroelectric Device with Oxygen-Doped ITO Electrodes

Robust Breakdown Reliability and Improved Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Using Grain Boundary Interruption

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Improved Ferroelectricity and Endurance of Hf0.5Zr0.5O2 Thin Films in Low Thermal Budget with Novel Bottom Electrode Doping Technology

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Observation and Characterization of Recoverable Fatigue Process Under Low-Electric Field (<1.8MV/cm) in HfZrO Ferroelectric Film

Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

Performance Improvement by Modifying Deposition Temperature in HfZrO x Ferroelectric Memory

Breakdown-limited endurance in HZO FeFETs: mechanism and improvement under bipolar stress

Intrinsic 90° charged domain wall and its effects on ferroelectric properties

Robustly stable intermediate memory states in HfO2−based ferroelectric field−effect transistors

First Direct Observation of the Built-in Electric Field and Oxygen Vacancy Migration in Ferroelectric Hf0.5Zr0.5O2 Film During Electrical Cycling.

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

Exploring tungsten-oxygen vacancy synergy: Impact on leakage characteristics in Hf0.5Zr0.5O2 ferroelectric thin films