Abstract:The discovery of ferroelectricity in HfO2 ultrathin films has gathered considerable interest from the microelectronic industry owing to their compatibility with complementary metal oxide semiconductor technology. However, a significant challenge in utilizing HfO2 thin films for commercial devices is the wakeup effect, which is an increase in polarization with the number of electric field cycles in HfO2-based capacitors. Despite efforts to develop wakeup-free HfO2 thin films, the root cause of this effect remains elusive. Some studies attribute it to the tetragonal (T) to orthorhombic (O) phase transformation, while others suggest it is due to the redistribution of oxygen vacancies within the HfO2 layer during electric field cycling. This study investigated the phase transformation dynamics and oxygen vacancy distributions in TiN/Hf0.5Zr0.5O2/TiN capacitors subjected to electric field cycling using in situ grazing incidence synchrotron x-ray diffraction and ex situ x-ray photoelectron spectroscopy. The as-grown HZO films were crystallized in a mixed phase consisting of monoclinic (M), tetragonal, and orthorhombic fractions. The T-phase volume fraction decreased continuously up to 10k electric field cycles. In contrast, the O-phase fraction increased within the first 100 cycles and then stabilized with further cycling. The redistribution of oxygen vacancies occurred continuously throughout the cycling process. The results revealed that continuous oxygen vacancy redistribution during electric field cycling resulted in phase transformation between the T-, O-, and M-phases. The study provides insight into the phase transformation dynamics and oxygen vacancy redistribution in TiN/Hf0.5Zr0.5O2/TiN capacitors during electric field cycling, shedding light on the underlying mechanisms of the wakeup effect.

First Direct Observation of the Built-in Electric Field and Oxygen Vacancy Migration in Ferroelectric Hf0.5Zr0.5O2 Film During Electrical Cycling.

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1-xZrxO2

Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf 1– x Zr x O 2

Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films

Ferroelectric and electric field cycling properties of un-doped HfO2 films

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

In Operando Optical Tracking of Oxygen Vacancy Migration and Phase Change in few Nanometers Ferroelectric HZO Memories

Electric field cycling behavior of ferroelectric hafnium oxide

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

Role of Oxygen Vacancies in Electric Field Cycling Behaviors of Ferroelectric Hafnium Oxide

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films

A General Physics Model of Oxygen Vacancy Dynamics for Ferroelectricity Enhancement and Degradation in Hafnia-Based Thin Films

In situ grazing incidence synchrotron x-ray diffraction studies on the wakeup effect in ferroelectric Hf0.5Zr0.5O2 thin films

Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations

Origin of Doping-Induced Endurance Improvement and Wake-up Effect Reduction in Ferroelectric Thin Films

Domain Wall Evolution in Hf0.5Zr0.5O2 Ferroelectrics under Field-Cycling Behavior

Intrinsic 90° charged domain wall and its effects on ferroelectric properties

Domain Wall Evolution in Hf 0.5 Zr 0.5 O 2 Ferroelectrics under Field-Cycling Behavior

Origin of La Doping-Induced Endurance Improvement and Wake-up Effect Reduction in Ferroelectric HfO2 Thin Films

Dynamic evolution of oxygen vacancies during cycling in antiferroelectric HfxZr1−xO2