Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films

Li Rui,Hui Zhu,Jie Liu,Si Wang,Na Xie,Zeng Huang,Zhixuan Fang
DOI: https://doi.org/10.1088/1742-6596/1907/1/012020
2021-01-01
Journal of Physics: Conference Series
Abstract:The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy-related devices. Interestingly, these materials showed a “wake-up effect”, which refers to the increase in remanent polarization with increasing electric field cycling number before the occurrence of the fatigue effect. The appearance of ferroelectric (FE) and anti-ferroelectric (AFE) properties in HfO2-based thin films is highly intriguing in terms of both the scientific context and practical application in various electronic and energy. In this paper, we have conducted an in-depth study on the relationship between the Wake-up effect in HfO2-based films and oxygen vacancies.
What problem does this paper attempt to address?