Abstract:The discovery of ferroelectricity in HfO2 ultrathin films has gathered considerable interest from the microelectronic industry owing to their compatibility with complementary metal oxide semiconductor technology. However, a significant challenge in utilizing HfO2 thin films for commercial devices is the wakeup effect, which is an increase in polarization with the number of electric field cycles in HfO2-based capacitors. Despite efforts to develop wakeup-free HfO2 thin films, the root cause of this effect remains elusive. Some studies attribute it to the tetragonal (T) to orthorhombic (O) phase transformation, while others suggest it is due to the redistribution of oxygen vacancies within the HfO2 layer during electric field cycling. This study investigated the phase transformation dynamics and oxygen vacancy distributions in TiN/Hf0.5Zr0.5O2/TiN capacitors subjected to electric field cycling using in situ grazing incidence synchrotron x-ray diffraction and ex situ x-ray photoelectron spectroscopy. The as-grown HZO films were crystallized in a mixed phase consisting of monoclinic (M), tetragonal, and orthorhombic fractions. The T-phase volume fraction decreased continuously up to 10k electric field cycles. In contrast, the O-phase fraction increased within the first 100 cycles and then stabilized with further cycling. The redistribution of oxygen vacancies occurred continuously throughout the cycling process. The results revealed that continuous oxygen vacancy redistribution during electric field cycling resulted in phase transformation between the T-, O-, and M-phases. The study provides insight into the phase transformation dynamics and oxygen vacancy redistribution in TiN/Hf0.5Zr0.5O2/TiN capacitors during electric field cycling, shedding light on the underlying mechanisms of the wakeup effect.

Progress and perspective on different strategies to achieve wake-up-free ferroelectric hafnia and zirconia-based thin films

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Wake-up-free ferroelectric Hf0.5Zr0.5O2 thin films characterized by precession electron diffraction

Research on the Wake-up Effect of Ferroelectric HfO2-ZrO2 Thin Films

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Defect engineering for control of wake-up effect in HfO2-based ferroelectrics

Reversible transition between the polar and antipolar phases and its implications for wake-up and fatigue in HfO2-based ferroelectric thin film

In Operando Optical Tracking of Oxygen Vacancy Migration and Phase Change in few Nanometers Ferroelectric HZO Memories

Ferroelectricity in hafnia controlled via surface electrochemical state

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Mechanical-electrical-chemical coupling study on the stabilization of a hafnia-based ferroelectric phase

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Designing wake-up free ferroelectric capacitors based on the $\mathrm{HfO_2/ZrO_2}$ superlattice structure

Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO 2

In situ grazing incidence synchrotron x-ray diffraction studies on the wakeup effect in ferroelectric Hf0.5Zr0.5O2 thin films

Origin of Doping-Induced Endurance Improvement and Wake-up Effect Reduction in Ferroelectric Thin Films

First Direct Observation of the Built-in Electric Field and Oxygen Vacancy Migration in Ferroelectric Hf0.5Zr0.5O2 Film During Electrical Cycling.

Precise control of fatigue, wake-up, charge injection, and break-down in Hf0.5Zr0.5O2-based ferroelectric memories

Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

Ferroelectric HfO2-ZrO2 multilayers with reduced wake-up