Abstract:Compared to electrochemical energy storage, dielectric thin film-based capacitors possess the advantages of higher voltage stability and higher break-down voltage as well as lower leakage current etc. Since HfO 2 films are compatible to microelectronic process and its ferroelectricity is strategically important in memory device, the realization of their excellent energy storage comparable will broaden their applications in microelectronic devices. In this study, we utilized Al 3+ dopant, known for its smaller ionic radius compared to Hf 4+ , to induce lattice disorder in the Hf 0.5 Zr 0.5 O 2 films, facilitating transformation of the Hf 0.5 Zr 0.5 O 2 film from ferroelectric to antiferroelectric, and ultimately to a superparaelectric-like relaxation antiferroelectric behaviors. We have experimentally demonstrated that, by introduction of an appropriate Al doping level of x= 4.13%, the Hf 0.5 Zr 0.5 O 2 thin films with a relaxation antiferroelectric characteristic can achieve a corresponding recoverable energy density of more than 100 J cm −3 , an efficiency of more than 80%, and an effective enhancement of the dielectric strength to more than 6 MV cm −1 . Compared to HfO 2 -based amorphous/crystalline films reported previously, this is a record-high energy density in atomic layer deposited HfO 2 /ZrO 2 ternary doped oxides, and beyond that, we also demonstrate their superfast charging/discharging as a capacitor. Targeting at high-speed supercapacitor applications in integrated circuit, HfO 2 -based dielectric may win the competition with perovskite oxides in terms of dielectric breakdown strength and charging/discharging speed etc. Our fundamental understanding of the physics behind also enriches the knowledge of materials science and dielectric physics.

Demonstration of Robust Breakdown Reliability and Enhanced Endurance in Gallium Doped HfO2 Ferroelectric Thin Films

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance (>1014) of HfZrO Anti-ferroelectrics for DRAM Applications

Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

Robust Breakdown Reliability and Improved Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Using Grain Boundary Interruption

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Domain Switching Characteristics in Ga-Doped HfO2 Ferroelectric Thin Films with Low Coercive Field

Enhanced Endurance and Imprint Properties in Hf 0.5 Zr 0.5 O 2−δ Ferroelectric Capacitors by Tailoring the Oxygen Vacancy

Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors

Domain Switching Characteristics in Ga-Doped HfO 2 Ferroelectric Thin Films with Low Coercive Field

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability

Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors with Thermal and Plasma-Enhanced Atomic Layer Deposited Hf 0.45 Zr 0.55 O X Ferroelectrics

Tunable Defect Engineering of Mo/TiON Electrode in Angstrom-Laminated HfO$_2$/ZrO$_2$ Ferroelectric Capacitors towards Long Endurance and High Temperature Retention

Demonstration of 1 V Reliable FeRAM Operation: V c Engineering Using Quasi-Chirality of Hf 1- x Zr x O 2 in a Nanolaminate Structure

Experimental study of endurance characteristics of Al-doped HfO2ferroelectric capacitor

Back-End-of-Line Compatible HfO2/ZrO2 Superlattice Ferroelectric Capacitor with High Endurance and Remnant Polarization

Superior and ultrafast energy storage performance of relaxorantiferroelectric HfO2-based supercapacitors

Enhanced Ferroelectric Polarization with Less Wake-Up Effect and Improved Endurance of Hf0.5Zr0.5O2 Thin Films by Implementing W Electrode

Silicon Atomic-Layer Doped Hf0.7Zr0.3O2 Films: Toward Low Coercive Field (0.64 MV/cm) and High Endurance (>1012 Cycles)

Improvement of the Ferroelectric Response of La-Doped Hafnium Zirconium Oxide Employing Tungsten Oxide Interfacial Layer with Back-End-of-Line Compatibility