Abstract:4D‐STEM is used to spatially resolve the complex microstructure of a multiphase polycrystalline hafnium zirconium oxide thin film. The analysis reveals site‐specific phase composition, alignment of polar axis, and phase/domain boundaries in the film, demonstrating a characterization framework for robust future investigation of the effects of growth, fabrication, and design parameters. Ferroelectric hafnium zirconium oxide (HZO) holds promise for nextgeneration memory and transistors due to its superior scalability and seamless integration with complementary metal‐oxide‐semiconductor processing. A major challenge in developing this emerging ferroelectric material is the metastable nature of the non‐centrosymmetric polar phase responsible for ferroelectricity, resulting in a coexistence of both polar and non‐polar phases with uneven grain sizes and random orientations. Due to the structural similarity between the multiple phases and the nanoscale dimensions of the thin film devices, accurate measurement of phase‐specific information remains challenging. Here, the application of 4D scanning transmission electron microscopy is demonstrated with automated electron diffraction pattern indexing to analyze multiphase polycrystalline HZO thin films, enabling the characterization of crystallographic phase and orientation across large working areas on the order of hundreds of nanometers. This approach offers a powerful characterization framework to produce a quantitative and statistically robust analysis of the intricate structure of HZO films by uncovering phase composition, polarization axis alignment, and unique phase distribution within the HZO film. This study introduces a novel approach for analyzing ferroelectric HZO, facilitating reliable characterization of process‐structure‐property relationships imperative to accelerating the growth optimization, performance, and successful implementation of ferroelectric HZO in devices.

Direct imaging of asymmetric interfaces and electrostatic potentials inside a hafnia-zirconia ferroelectric nanocapacitor

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Operando observation of reversible oxygen migration and phase transitions in ferroelectric devices

Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing

Unravelling the nanoscale mechanism of polarization reversal in a Hf0.5Zr0.5O2-based ferroelectric capacitor by vector piezoresponse force microscopy

Interplay between Strain and Defects at the Interfaces of Ultra‐Thin Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

Quantification of Interfacial Charges in Multilayered Nanocapacitors by Operando Electron Holography

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

Oxygen vacancy contributions to the electrical stress response and endurance of ferroelectric hafnium zirconium oxide thin films

Small Signal Capacitance in Ferroelectric HZO: Mechanisms and Physical Insights

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2

Electrochemical control of ferroelectricity in hafnia-based ferroelectric devices using reversible oxygen migration

First Direct Observation of the Built-in Electric Field and Oxygen Vacancy Migration in Ferroelectric Hf0.5Zr0.5O2 Film During Electrical Cycling.

Atomic-Scale Scanning of Domain Network in the Ferroelectric HfO2 Thin Film

A Stable Rhombohedral Phase in Ferroelectric Hf(Zr)1+xO2 Capacitor with Ultralow Coercive Field.

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films

Large‐Scale Hf0.5Zr0.5O2 Membranes with Robust Ferroelectricity

Interface Engineering on Ferroelectricity of Transparent Hf0.5Zr0.5O2 Ferroelectric Capacitors