Abstract:4D‐STEM is used to spatially resolve the complex microstructure of a multiphase polycrystalline hafnium zirconium oxide thin film. The analysis reveals site‐specific phase composition, alignment of polar axis, and phase/domain boundaries in the film, demonstrating a characterization framework for robust future investigation of the effects of growth, fabrication, and design parameters. Ferroelectric hafnium zirconium oxide (HZO) holds promise for nextgeneration memory and transistors due to its superior scalability and seamless integration with complementary metal‐oxide‐semiconductor processing. A major challenge in developing this emerging ferroelectric material is the metastable nature of the non‐centrosymmetric polar phase responsible for ferroelectricity, resulting in a coexistence of both polar and non‐polar phases with uneven grain sizes and random orientations. Due to the structural similarity between the multiple phases and the nanoscale dimensions of the thin film devices, accurate measurement of phase‐specific information remains challenging. Here, the application of 4D scanning transmission electron microscopy is demonstrated with automated electron diffraction pattern indexing to analyze multiphase polycrystalline HZO thin films, enabling the characterization of crystallographic phase and orientation across large working areas on the order of hundreds of nanometers. This approach offers a powerful characterization framework to produce a quantitative and statistically robust analysis of the intricate structure of HZO films by uncovering phase composition, polarization axis alignment, and unique phase distribution within the HZO film. This study introduces a novel approach for analyzing ferroelectric HZO, facilitating reliable characterization of process‐structure‐property relationships imperative to accelerating the growth optimization, performance, and successful implementation of ferroelectric HZO in devices.

Resolving Mechanical Properties and Morphology Evolution of Free‐Standing Ferroelectric Hf 0.5 Zr 0.5 O 2

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance <tex>$(> 10^{14})$</tex> of HfZrO Anti-ferroelectrics for DRAM Applications

High Quality Factors in Superlattice Ferroelectric Hf 0.5 Zr 0.5 O 2 Nanoelectromechanical Resonators

Large‐Scale Hf0.5Zr0.5O2 Membranes with Robust Ferroelectricity

Thickness-Dependent Ferroelectricity in Freestanding Hf 0.5 Zr 0.5 O 2 Membranes

Nanoscale Phase and Orientation Mapping in Multiphase Polycrystalline Hafnium Zirconium Oxide Thin Films Using 4D‐STEM and Automated Diffraction Indexing

Tensile stress regulated microstructures and ferroelectric properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films

Large‐scale Hf 0.5 Zr 0.5 O 2 Membranes with Robust Ferroelectricity

Observing Ferroelastic switching in Hf 0.5 Zr 0.5 O 2 Thin Film

Complexities in the growth and stabilization of polar phase in the Hf$_{0.5}$Zr$_{0.5}$O$_2$ thin films grown by Pulsed Laser Deposition

Precise structure and polarization determination of Hf0.5Zr0.5O2 with electron ptychography

Epitaxial Hf0.5Zr0.5O2 Films: A Temperature Dependence Study

Ferroelectricity in Hafnia: The Origin of Nanoscale Stabilization

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Ferroelectricity of pristine Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films fabricated by atomic layer deposition

Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films

Effects of Growth Orientations and Epitaxial Strains on Phase Stability of HfO$_2$ Thin Films

Microstructure Research For Ferroelectric Origin In The Strained Hf0.5zr0.5o2 Thin Film Via Geometric Phase Analysis

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress