Abstract:Abstract Ferroelectric hafnia-based thin films have attracted intense attention due to their compatibility with complementary metal-oxide-semiconductor technology. However, the ferroelectric orthorhombic phase is thermodynamically metastable. Various efforts have been made to stabilize the ferroelectric orthorhombic phase of hafnia-based films such as controlling the growth kinetics and mechanical confinement. Here, we demonstrate a key interface engineering strategy to stabilize and enhance the ferroelectric orthorhombic phase of the Hf 0.5 Zr 0.5 O 2 thin film by deliberately controlling the termination of the bottom La 0.67 Sr 0.33 MnO 3 layer. We find that the Hf 0.5 Zr 0.5 O 2 films on the MnO 2 -terminated La 0.67 Sr 0.33 MnO 3 have more ferroelectric orthorhombic phase than those on the LaSrO-terminated La 0.67 Sr 0.33 MnO 3 , while with no wake-up effect. Even though the Hf 0.5 Zr 0.5 O 2 thickness is as thin as 1.5 nm, the clear ferroelectric orthorhombic (111) orientation is observed on the MnO 2 termination. Our transmission electron microscopy characterization and theoretical modelling reveal that reconstruction at the Hf 0.5 Zr 0.5 O 2 / La 0.67 Sr 0.33 MnO 3 interface and hole doping of the Hf 0.5 Zr 0.5 O 2 layer resulting from the MnO 2 interface termination are responsible for the stabilization of the metastable ferroelectric phase of Hf 0.5 Zr 0.5 O 2 . We anticipate that these results will inspire further studies of interface-engineered hafnia-based systems.

Interface Engineering on Ferroelectricity of Transparent Hf0.5Zr0.5O2 Ferroelectric Capacitors

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

High polarization, endurance and retention in sub-5 nm Hf0.5Zr0.5O2 films

High polarization, endurance and retention in sub-5 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ films

Interface-Roughness Effect on Polarization Switching and Reliability Performance of Doped-HfO 2 Capacitors

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

A Study on the Hf0.5Zr0.5O2 Ferroelectric Capacitors Fabricated with Hf and Zr Chlorides

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Enhancement of the Ferroelectricity by Interface Engineering Observed by in Situ Transmission Electron Microscope

Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf 0.5 Zr 0.5 O 2 Film

Back-End of Line Compatible Hf0.5Zr0.5O2 with ZrO2 Seed Layer for Enhanced Ferroelectricity

Back-End of Line Compatible Hf 0.5 Zr 0.5 O 2 with ZrO 2 Seed Layer for Enhanced Ferroelectricity

High performance and nearly wake-up free Hf 0.5 Zr 0.5 O 2 ferroelectric capacitor realized by middle layer strategy with BEOL compatibility

Enhanced ferroelectricity in epitaxial Hf0.5Zr0.5O2 thin films integrated with Si(001) using SrTiO3 templates

High Performance and Nearly Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Capacitor Realized by Middle Layer Strategy with BEOL Compatibility

Ferroelectric capacitors with triple level cell storage capability at low operating voltage by introducing TiN interlayer

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Dual Al₂O₃/Hf₀.₅Zr₀.₅O₂ Stack Thin Films for Improved Ferroelectricity and Reliability