Abstract:Multi‐level ferroelectric switching depends strongly on pulse timings. A hysteresis shift along the voltage axis ("imprint") occurs when a ferroelectric device is left in a particular state. Here, different pulse sequences are adopted to investigate and explain the contrasting effects of fluid (short time scales) and time‐dependent imprint (long time scales) on multi‐level switching in Hf0.5Zr0.5O2 capacitors. Fluorite‐structured ferroelectrics are one of the most promising material systems for emerging memory technologies. However, when integrated into electronic devices, these materials exhibit strong imprint effects that can lead to a failure during writing or retention operations. To improve the performance and reliability of these devices, it is cardinal to understand the physical mechanisms underlying the imprint during operation. In this work, the comparison of First‐Order Reversal Curves measurements with a new gradual switching experimental approach named "Unipolar Reversal Curves" is used to analyze both the fluid imprint and the time‐dependent imprint effects within a 10 nm‐thick Hf0.5Zr0.5O2 capacitor. Interestingly, the application of delay times (ranging from 100 μs up to 10 s) between the partial switching pulses of a Unipolar Reversal Curve sequence enables analysis of the connection between the two aforementioned imprint types. Based on these results, the study finally reports a unified physical interpretation of imprint in the context of a charge injection model, which explains both types of imprint and sheds light on the dynamics of multi‐level polarization switching in ferroelectrics.

Non-Destructive Imaging of Breakdown Process in Ferroelectric Capacitors Using \textit{In-situ} Laser-Based Photoemission Electron Microscopy

Dielectric breakdown behavior of ferroelectric HfO2 capacitors by constant voltage stress studied by in situ laser-based photoemission electron microscopy

Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

Model of Dielectric Breakdown in Hafnia-Based Ferroelectric Capacitors

Phase field modeling of dielectric breakdown of ferroelectric polymers subjected to mechanical and electrical loadings

Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors

Direct imaging of asymmetric interfaces and electrostatic potentials inside a hafnia-zirconia ferroelectric nanocapacitor

The Jumping Dielectric Breakdown Behavior Induced by Crack Propagation in Ferroelectric Materials: A Phase Field Study

Breakdown-limited endurance in HZO FeFETs: mechanism and improvement under bipolar stress

Effect of electrical stress on time dependent dielectric breakdown (TDDB) tolerate capability of HfO2-ZrO2 ferroelectric films with different thicknesses

Atomic-Scale Mechanisms of Defect-Induced Retention Failure in Ferroelectrics

In Situ Observation of Point‐Defect‐Induced Unit‐Cell‐Wise Energy Storage Pathway in Antiferroelectric PbZrO3

Electric field cycling behavior of ferroelectric hafnium oxide

Direct Observation of Nanoscale Dynamics of Ferroelectric Degradation

Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf0.5Zr0.5O2-Based Ferroelectrics under Both Forward and Reverse Stress Conditions

Demonstration of Robust Breakdown Reliability and Enhanced Endurance in Gallium Doped HfO2 Ferroelectric Thin Films

First Direct Observation of the Built-in Electric Field and Oxygen Vacancy Migration in Ferroelectric Hf0.5Zr0.5O2 Film During Electrical Cycling.

Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory

In-situ TEM Observation of Multilevel Storage Behavior in Low Power FeRAM Device

Comprehensive Analysis of Duty-Cycle Induced Degradations in HfxZr1-xO2-Based Ferroelectric Capacitors: Behavior, Modeling, and Optimization

Phase-field modeling of the coupled domain structure and dielectric breakdown evolution in a ferroelectric single crystal.