Abstract:Power dissipation is one of the most critical issues for nanoelectronic circuits. For low-power logic applications, Tunnel FET (TFET) and ferroelectric (FE) based negative-capacitance FET (NCFET) can break the fundamental limitation of subthreshold swing in conventional MOSFET. In this talk, from the perspective of mechanism engineering, a new kind of steep-slope device with hybrid operation mechanism is presented with the state-of-the-art comprehensive electric properties, fundamentally addressing the issue of low drive current in conventional TFETs [1-3]. Furthermore, a novel energy-efficient TFET-CMOS hybrid foundry platform based on 300nm CMOS baseline process is also demonstrated for power-constraint AIoT applications [4-5]. For FE-HfO2-based NCFET devices, the possibility of NCFET as a steep-slope device for high-speed and low-voltage operation will be re-assessed based on our proposed dynamic negative capacitance theory [6-7]. Besides, by exploiting the inherent physics of FE polarization switching, this talk will present that ferroelectric-based devices can be utilized for ultralow hardware-cost and high energy-efficient solutions for emerging computing applications. As an example, by utilizing the non-volatile polarization switching dynamics and three-terminal structure of hafnia-based FeFET device, we propose novel Leaky-FeFET based designs to mimic biological neurons [8-9], and a novel FeFET-based time-domain computing in memory system with the record highest area and energy efficiency [10]. By combing the features of FE layer with TFET device, a novel ferroelectric TFET (FeTFET) based content addressable memory cell with only one transistor is proposed and experimentally demonstrated [11], showing its great potential for area- and energy-efficient machine learning applications.

Deep insights into dielectric breakdown in tunnel FETs with awareness of reliability and performance co-optimization

Improvement of Thermal and Mechanical Reliability of a LDMOS FET Using Graphene

Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence.

Deep Understanding of Reliability in Hf-based FeFET During Bipolar Pulse Cycling: Trap Profiling for Read-After-Write Delay and Memory Window Degradation

Reliability Performance of Novel Tunneling Field Effect Transistors Based on Foundry Platform

Design and Simulation on Improving the Reliability of Gate Oxide in SiC CDMOSFET

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

Steep Switch with Hybrid Operation Mechanism for Performance Improvement (Invited)

Interconnection Reliability on FinFET Devices

New Insights into Energy Efficiency of Tunnel FET with Awareness of Source Doping Gradient Variation

Investigation of Light Doping and Hetero Gate Dielectric Carbon Nanotube Tunneling Field-Effect Transistor for Improved Device and Circuit-Level Performance

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Ferroelectric and Interlayer Co-optimization with In-depth Analysis for High Endurance FeFET

New steep-slope device of comprehensive properties enhancement with hybrid operation mechanism for ultra-low-power applications

Challenges and Solutions of the TFET Circuit Design

Novel Tunnel- and Ferroelectric-based Devices by Mechanism Engineering for Ultra-Low Power Applications

First Foundry Platform Of Complementary Tunnel-Fets In Cmos Baseline Technology For Ultralow-Power Iot Applications: Manufacturability, Variability And Technology Roadmap

Breakdown-limited endurance in HZO FeFETs: mechanism and improvement under bipolar stress

Investigation of Breakdown Voltage Degradation in Low-Voltage Narrow Gate Trench MOSFET by Edge Termination Optimization