Abstract:Novel steep‐slope 2D tunnel field‐effect transistors are realized through the van der Waals integration of ferroelectric CuInP2S6 with WSe2/MoS2 heterojunction as well as WSe2 homojunction. These devices break through the fundamental thermionic limit, demonstrating a remarkably minimal subthreshold slope of 14.2 mV dec−1 and an impressive on/off ratio of 108, thus presenting strong potential for future low‐power applications. sPower consumption has emerged as a central concern in the realm of complementary metal‐oxide‐semiconductor (CMOS) technology. Silicon‐based semiconductor devices have now approached the fundamental thermionic limit of the subthreshold swing (SS), which is 60 mV dec−1, as defined by the Boltzmann tyranny. Tunnel field‐effect transistors (TFETs) are considered promising low‐power devices due to the band‐to‐band tunneling mechanism, which effectively avoids the thermionic limit. However, TFETs require the establishment of a staggered band alignment and currently lack effective techniques for adjusting the band offset. Here, by harnessing the robust ferroelectric field inherent to 2D CuInP2S6 (CIPS), a 2D WSe2/MoS2 heterojunction as well as a WSe2 homojunction TFET controlled by ferroelectric gate are presented. The newly developed TFET achieves an ultra‐low SS of 14.2 mV dec−1 at room temperature, an on/off current ratio exceeding 108, and a minimal hysteresis window below 10 mV. Additionally, the device demonstrates gate tunable negative differential resistance (NDR) characteristics with a very large peak‐to‐valley current ratio (PVCR) of 10.56 at room temperature. These findings underscore the significant promise of 2D ferroelectric tuning heterojunction and homojunction for future low‐power electronic applications.

New steep-slope device of comprehensive properties enhancement with hybrid operation mechanism for ultra-low-power applications

Multi-finger Schottky-Barrier tunneling FET with hybrid operation mechanism for steep transition and high on current

Steep Switch with Hybrid Operation Mechanism for Performance Improvement (Invited)

High performance tunnel field-effect transistor by gate and source engineering.

Device physics and design of T-gate Schottky barrier tunnel FET with adaptive operation mechanism

Benchmarking of multi-finger Schottky-Barrier tunnel FET for ultra-low power applications

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Comprehensive performance re-assessment of TFETs with a novel design by gate and source engineering from device/circuit perspective

Resistive-gate field-effect transistor exhibiting steep subthreshold slope of 5mV/dec and high ION/IOFF ratio

Re-Assessment of Steep-Slope Device Design from a Circuit-Level Perspective Using Novel Evaluation Criteria and Model-Less Method

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Novel Silicon-Based Tunneling FET with Junction Engineering and Gate Configuration for Low Power Applications (Invited)

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

Performance Improvement of Si Pocket-Tunnel Fet with Steep Subthreshold Slope and High I-On/I-Off Ratio

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics

Ultra-Low-Power and Performance-Improved Logic Circuit Using Hybrid TFET-MOSFET Standard Cells Topologies and Optimized Digital Front-End Process

Experimental Investigation of a Novel Junction-Modulated Hetero-Layer Tunnel FET with the Striped Gate for Low Power Applications.