Abstract:This review manuscript mainly focus on giving readers a concise concept of green transistors with steep slopes based on 2D materials, including but not limited to 2D NCFET, 2D DSFET and 2D TFET structures. These kinds of 2D materials based green transistors concurrently combine the merits of lower power consumption of green steep slope transistors and superelectrostatic gate controllability and short channel effect immunity properties of 2D materials, holding substantial potentials for applications in low power consumption electronics. With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down proportionally caused by thermionic limit subthreshold swing (SS) (60 mV dec−1) pose substantial challenges for today's semiconductor industry. To further sustain the Moore's law life, incorporation of new device concepts or new materials are imperative. 2D materials are predicted to be able to combat SCEs by virtue of high carrier mobility maintainability regardless of thickness thinning down, dangling bonds free surface and atomic thickness, which contributes to super gate electrostatic controllability. To overcome increasing power dissipation problem, new device structures including negative capacitance FET (NCFET), tunnel FET (TFET), dirac source FET (DSFET) and the like, which show superiority in decreasing VDD by lowering SS below thermionic limit of 60 mV dec−1 have been brought out. The combination of 2D materials and ultralow steep slope device structures holds great promise for low power‐dissipation electronics, which encompass both suppressed SCEs and reduced VDD simultaneously, leading to improved device performance and lowered power dissipation.

Resistive-gate field-effect transistor exhibiting steep subthreshold slope of 5mV/dec and high ION/IOFF ratio

Resistive-gate Field-Effect Transistor Exhibiting Steep Subthreshold Slope of 5mv/dec and High ION/IOFF Ratio

Resistive-Gate Field-Effect Transistor: A Novel Steep-Slope Device Based on a Metal—Insulator—Metal—Oxide Gate Stack

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Performance Improvement of Si Pocket-Tunnel Fet with Steep Subthreshold Slope and High I-On/I-Off Ratio

High performance tunnel field-effect transistor by gate and source engineering.

New steep-slope device of comprehensive properties enhancement with hybrid operation mechanism for ultra-low-power applications

Ultra‐Steep‐Slope High‐Gain MoS <sub>2</sub> Transistors with Atomic Threshold‐Switching Gate

Enhancing subthreshold slope and ON-current in a simple iTFET with overlapping gate on source-contact, drain Schottky contact, and intrinsic SiGe-pocket

Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Steep-slope Field-Effect Transistors with AlGaN/GaN HEMT and Oxide-Based Threshold Switching Device.

A novel negative quantum capacitance field-effect transistor with molybdenum disulfide integrated gate stack and steep subthreshold swing for ultra-low power applications

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

Steep Slope Field Effect Transistors Based on 2D Materials

Recessed Gate Cylindrical Heterostructure TFET, a Device with Extremely Steep Subthreshold Swing

A new stacked gate oxide L-shaped tunnel field effect transistor

Multi-finger Schottky-Barrier tunneling FET with hybrid operation mechanism for steep transition and high on current

A Tunnel-Induced Injection Field-Effect Transistor with Steep Subthreshold Slope and High On-off Current Ratio

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION / IOFF ratio and steep subthreshold swing