Abstract:A steep switching device with a low subthreshold swing (SS) that overcomes the fundamental Boltzmann limit (kT/q) is required to efficiently process a continuously increasing amount of data. Recently, two-dimensional material-based impact ionization transistors with various structures have been reported with the advantages of a low critical electric field and a unique quantum confinement effect. However, most of them cannot retain steep switching at room temperature, and device performance degradation issues caused by impact ionization-induced hot carriers have not been structurally addressed. In this study, we presented an impact-ionization-based threshold switching field-effect transistor (I2S-FET) fabricated with a serial connection of a MoS2 FET and WSe2 impact ionization-based threshold switch (I2S). We obtained repetitive operation with low SS (32.8 mV dec-1) at room temperature, along with low dielectric injection efficiency (10-6), through a structural design with separation of the conducting region, which determines on-state carrier transport, and the steep-switching region where the transition from off- to on-state occurs via impact ionization. Furthermore, compared to previously reported threshold-switching devices, our device demonstrated hysteresis-free switching characteristics. This study provides a promising approach for developing next-generation energy-efficient electronic devices and ultralow-power applications.

Steep-slope Field-Effect Transistors with AlGaN/GaN HEMT and Oxide-Based Threshold Switching Device.

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs

Ultra‐Steep‐Slope High‐Gain MoS <sub>2</sub> Transistors with Atomic Threshold‐Switching Gate

Resistive-gate field-effect transistor exhibiting steep subthreshold slope of 5mV/dec and high ION/IOFF ratio

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

Resistive-Gate Field-Effect Transistor: A Novel Steep-Slope Device Based on a Metal—Insulator—Metal—Oxide Gate Stack

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

A steep-switching impact ionization-based threshold switching field-effect transistor

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Threshold Voltage Modulation Engineering Using P‐type CuO and NiO for the AlGaN/GaN Enhancement‐Mode Fin‐MOS‐HEMTs on the Si Substrates

Investigations on In0.12Al0.88N/AlN/AlxGa1−xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT

Normally-off AlN/β-Ga2O3 Field-Effect Transistors Using Polarization-Induced Doping

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Efficient III-Nitride MIS-HEMT devices with high-κ gate dielectric for high-power switching boost converter circuits

Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs