Abstract:Gate oxide breakdown (OBD) is a key factor limiting the useful lifetime of an integrated circuit. Unfortunately, the conventional approach for full chip OBD reliability analysis assumes a uniform oxide thickness and worst-case temperature for all devices. In practice, however, gate oxide thickness varies from die-to-die and within-die and hence may cause different reliability for different devices even chips. Moreover, due to the increased across-die temperature variation, such difference may be exacerbated. Thus, as the precision of variation control worsens, an alternative reliability analysis approach is needed. In this paper, we propose a statistical framework for chip-level gate OBD reliability analysis while considering both die-to-die and within-die components of thickness variations as well as the across-die temperature variation. The thickness of each device is modeled as a distinct random variable and thus the full chip reliability estimation problem is defined on a huge sample space of several million devices. We observe that the chip-level OBD reliability function is independent of the relative location of the individual devices. This enables us to transform the problem such that the resulting representation can be expressed in terms of much fewer random variables. Using this transformation, we present a computationally efficient and accurate approach for estimating the full chip reliability while considering spatial correlations of gate oxide thickness as well as temperature variation. We show that, compared to Monte Carlo simulation, the proposed method incurs an error of only around 1% while improving the runtime by more than three orders of magnitude.

Low frequency noise statistics for the breakdown characterization of ultra-thin gate oxides

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Substrate and process dependence of gate oxide reliability of dual gate CMOS process

Random Telegraph Signals And Low-Frequency Noise In N-Metal-Oxide-Semiconductor Field-Effect Transistors With Ultranarrow Channels

A Thorough Study of Quasi-Breakdown Phenomenon of Thin Gate Oxide in Dual-Gate CMOSFET's

Low Frequency Noise of the Tunneling Contact Thin-Film Transistors

Stress induced leakage current and time dependent dielectric breakdown characteristics of ultra-thin HFO2 gate dielectrics

Impact of Electrical Stress on Defect Generation in Thin GeO<sub>2</sub>/Ge Gate Stacks Fabricated by Thermal Oxidation

Investigation of ultra-thin SiO/sub 2/ gate oxide characteristics

Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress.

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

Behavior of Low-Frequency Noise in N-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

A Nanoscale Analysis Of The Leakage Current In Sio(2) Breakdown

Localized Breakdown in Dielectrics and Macroscopic Charge Transport Through the Whole Gate Stack: A Comparative Study

Low-frequency noise in narrow channel MOSFETs

Low-frequency noise in InSnZnO thin film transistors with high-quality SiO2 gate oxide stacks

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Modeling and characterization of the low frequency noise behavior for amorphous InGaZnO thin film transistors in the subthreshold region

Characterization of tunneling current in ultra-thin gate oxide