Abstract:Silicon germanium (SiGe) channels for CMOS are favorable due to high intrinsic carrier mobility and band gap tunability[1] To utilize the superior properties of SiGe, low interface defect density (Dit) must be obtained at the SiGe-high k interface. Germanium oxide (GeOx) is the primary source of interface defects[2]. In comparison with GeOx, SiOx has a higher heat of formation. Using this difference, it is possible to reduce interface defects with selective reduction or diffusion of GeOx by employing an oxygen-scavenging metal as a gate material[4,5] such as aluminum. ALD was performed with TDMAH and H2O to grow 50 cycles (5nm) of HfO2 at 250C. 50 nm thick, 150 um diameter Ni or Al gate metal was deposited by thermal evaporation. C-V measurement were employed to characterized the electronic defects. The interface trap density (Dit) integrated across the band gap was more than an order of magnitude lower for Al vs Ni gated MOSCAPs. From TEM-EELS-EDS measurement, Al gated MOSCAPs were observed to have a very thin interfacial oxide layer (<0.5 nm) with high-k oxide atoms almost directly bonded with the SiGe surface atoms with just a thin SiOx interlyer. Selective scavenging of Ge-O vs Si-O bonds is consistent with a DFT model showing HfO2/SiOx/SiGe interfaces can be defect-free. DFT models also show that two 3- and 5-fold coordinated interfacial Si atoms do not create any mid-gap or band-edge states. These results indicate the need to form a SiOx interface between HfO2 and SiGe, but the same interface may be created with other techniques. The alternative techniques include a selective oxidation of SiGe form SIOx using remote O3 oxidation and ALD of an Si rich layer on SiGe. The key issue is which of the three techniques is manufacturable and can produce both a scale oxide and scaled interlayer. [1] Liu, C. et. al, MRS Bull. 39, 658–662 (2014). [2] Zhang, L. et al, ACS Appl. Mater. Interfaces 8, 19110–19118 (2016). [3] Zhang, L. et al, ACS Appl. Mater. Interfaces 7, 20499–20506 (2015). [4] Kim, H. et al, J. Appl. Phys. 96, 3467–3472 (2004). [5] Frank, M. et al, ECS Solid State Lett. 2, N8–N10 (2012). [6] Sardashti, K. et al. Appl. Surf. Sci. 366, 455–463 (2016)

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Germanium Surface Passivation and Atomic Layer Deposition of High-K Dielectrics-A Tutorial Review on Ge-Based Mos Capacitors

Silane–Ammonia Surface Passivation for Gallium Arsenide Surface-Channel N-Mosfets

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

A New Silane-Ammonia Surface Passivation Technology For Realizing Inversion-Type Surface-Channel Gaas N-Mosfet With 160 Nm Gate Length And High-Quality Metal-Gate/High-K Dielectric Stack

Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) Interface Trap State Reduction Via In-Situ N-2/H-2 RF Downstream Plasma Passivation

Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga 2 O 3 MOSFET

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Comparative Study of Si3N4-PECVD and Al2O3-ALD Surface Passivation in T-Shaped Gate InAlAs/InGaAs InP Based HEMTs

Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures.

Effective electrical passivation of Ge(100) for HfO 2 gate dielectric layers using O 2 plasma

Effective Interface Passivation of A Ge/Hfo2 Gate Stack Using Ozone Pre-Gate Treatment and Ozone Ambient Annealing

Ultralow Defect Density at Sub-0.5 Nm HfO2/SiGe Interfaces Via Selective Oxygen Scavenging

Demonstration of Germanium nMOSFETs with interface passivation of ozone pre-gate treatment and ozone ambient annealing

HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3 </sub>Nanolaminate on Si<sub>0.7</sub>Ge<sub>0.3</sub>(100) Surface by Thermal Atomic Layer Deposition

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment