Abstract:Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (offering a mobility gain of approximately x 2 for electrons and x 4 for holes when compared to conventional Si channels). However, many issues still need to be addressed before Ge can be implemented in high-performance field-effect-transistor (FET) devices. One of the key issues is to provide a high-quality interfacial layer, which does not lead to substantial drive current degradation in both low equivalent oxide thickness and short channel regime. In recent years, a wide range of materials and processes have been investigated to obtain proper interfacial properties, including different methods for Ge surface passivation, various high-k dielectrics and metal gate materials and deposition methods, and different post-deposition annealing treatments. It is observed that each process step can significantly affect the overall metal-oxide-semiconductor (MOS)-FET device performance. In this review, we describe and compare combinations of the most commonly used Ge surface passivation methods (e.g. epi-Si passivation, surface oxidation and/or nitridation, and S-passivation) with various high-k dielectrics. In particular, plasma-based processes for surface passivation in combination with plasma-enhanced atomic layer deposition for high-k depositions are shown to result in high-quality MOS structures. To further improve properties, the gate stack can be annealed after deposition. The effects of annealing temperature and ambient on the electrical properties of the MOS structure are also discussed.

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

TiO2/HfO2 Bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeO xNy passivation layer

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Characterization of Hfo2/Al2o3 Gate Dielectric Nanometer-Stacks Grown by Atomic Layer Deposition on Ge Substrates

Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Implementing TiO2 As Gate Dielectric for Ge-channel Complementary Metal-Oxide-semiconductor Devices by Using HfO2/GeO2 Interlayer

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Germanium Surface Passivation and Atomic Layer Deposition of High-K Dielectrics-A Tutorial Review on Ge-Based Mos Capacitors

Effective electrical passivation of Ge(100) for HfO 2 gate dielectric layers using O 2 plasma

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties