Abstract:In this paper, a near-ideal subthreshold swing MoS2 back-gate transistor with an optimized ultrathin HfO2 dielectric layer is reported with detailed physical and electrical characteristics analyses. Ultrathin (10 nm) HfO2 films created by atomic-layer deposition (ALD) at a low temperature with rapid-thermal annealing (RTA) at different temperatures from 200 degrees C to 800 degrees C have a great effect on the electrical characteristics, such as the subthreshold swing (SS), on-to-off current (I-ON/I-OFF ) ratio, etc, of the MoS2 devices. Physical examinations are performed, including x-ray diffraction, atomic force microscopy, and electrical experiments of metal-oxidesemiconductor capacitance-voltage. The results demonstrate a strong correlation between the HfO2 dielectric RTA temperature and the film characteristics, such as film density, crystallization degree, grain size and surface states, inducing a variation in the electrical parameters, such as the leakage, D-it, equivalent oxide thickness, SS, and I-ON, as well as I-ON/I-OFF of the MoS2 field effect transistors with the same channel materials and fabrication methods. With a balance between the crystallization degree and the surface state, the ultrathin (10 nm) HfO2 gate dielectric RTA at 500 degrees C is demonstrated to have the best performance with a field effect mobility of 40 cm(2) V-1 s(-1) and the lowest SS of 77.6 mV(-1) decade, which are superior to those of the control samples at other temperatures. The excellent transistor results with an optimized industry-based HfO2 ALD and RTA process provide a promising approach for MoS2 applications into the scaling of the nanoscale CMOS process.

Integration of High-K Oxide on Mos2 by Using Ozone Pretreatment for High-Performance Mos2 Top-Gated Transistor with Thickness-Dependent Carrier Scattering Investigation

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

The Integration of Sub-10 Nm Gate Oxide on Mos2 with Ultra Low Leakage and Enhanced Mobility

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

Improved Integration of Ultra-Thin High-K Dielectrics in Few-Layer Mos2 Fet by Remote Forming Gas Plasma Pretreatment

Enhancement of Carrier Mobility in Mos2 Field Effect Transistors by A Sio2 Protective Layer

Surface functionalization toward top-gated monolayer MoS2 field-effect transistors with ZrO2/Al2O3 as composite dielectrics

Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor

UV-Ozone-Assisted Solution-Processed High- k ZrO$_\text{2}$ for MoS$_{\text{2}}$ Field-Effect Transistors

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Electrical Performance Of Multilayer Mos2 Transistors On High-Kappa Al2o3 Coated Si Substrates

Impacts of HfZrO thickness and anneal temperature on performance of MoS2negative-capacitance field-effect transistors

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Electrical performance of multilayer MoS2 transistors on high-κ Al2O3 coated Si substrates

Fabrication of hybrid self-assembled monolayer/hafnium oxide gate dielectric by radical oxidation for molybdenum disulfide field-effect transistors

Remote N-2 Plasma Treatment to Deposit Ultrathin High-K Dielectric As Tunneling Contact Layer for Single-Layer MoS2 MOSFET

Implementing Remote Doping and Suppressed Scattering in MoS2 Field-Effect Transistor Using CMOS-Compatible Process

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric