Abstract:In this paper, a near-ideal subthreshold swing MoS2 back-gate transistor with an optimized ultrathin HfO2 dielectric layer is reported with detailed physical and electrical characteristics analyses. Ultrathin (10 nm) HfO2 films created by atomic-layer deposition (ALD) at a low temperature with rapid-thermal annealing (RTA) at different temperatures from 200 degrees C to 800 degrees C have a great effect on the electrical characteristics, such as the subthreshold swing (SS), on-to-off current (I-ON/I-OFF ) ratio, etc, of the MoS2 devices. Physical examinations are performed, including x-ray diffraction, atomic force microscopy, and electrical experiments of metal-oxidesemiconductor capacitance-voltage. The results demonstrate a strong correlation between the HfO2 dielectric RTA temperature and the film characteristics, such as film density, crystallization degree, grain size and surface states, inducing a variation in the electrical parameters, such as the leakage, D-it, equivalent oxide thickness, SS, and I-ON, as well as I-ON/I-OFF of the MoS2 field effect transistors with the same channel materials and fabrication methods. With a balance between the crystallization degree and the surface state, the ultrathin (10 nm) HfO2 gate dielectric RTA at 500 degrees C is demonstrated to have the best performance with a field effect mobility of 40 cm(2) V-1 s(-1) and the lowest SS of 77.6 mV(-1) decade, which are superior to those of the control samples at other temperatures. The excellent transistor results with an optimized industry-based HfO2 ALD and RTA process provide a promising approach for MoS2 applications into the scaling of the nanoscale CMOS process.

Fabrication of hybrid self-assembled monolayer/hafnium oxide gate dielectric by radical oxidation for molybdenum disulfide field-effect transistors

Utilizing self-assembled-monolayer-based gate dielectrics to fabricate molybdenum disulfide field-effect transistors

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Near-Ideal Subthreshold Swing Mos2 Back-Gate Transistors With An Optimized Ultrathin Hfo2 Dielectric Layer

Control of threshold voltage by gate metal electrode in molybdenum disulfide field-effect transistors

Enhanced Electrical Properties Of Lithography-Free Fabricated Mos2 Field Effect Transistors With Chromium Contacts

Monolayer Molybdenum Disulfide Transistors with Scaling Dielectric Equivalent Oxide Thickness

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Realizing an Omega-Shaped Gate MoS2 Field-Effect Transistor Based on a SiO2/MoS2 Core-Shell Heterostructure.

Enhanced Electrical Properties of Lithography-Free Fabricated MoS<sub>2</sub> Field Effect Transistors with Chromium Contacts

Monolayer Molybdenum Disulfide Transistors with Single-Atom-Thick Gates.

UV-Ozone-Assisted Solution-Processed High- k ZrO$_\text{2}$ for MoS$_{\text{2}}$ Field-Effect Transistors

Effect of Al2O3 Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor

Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Surface functionalization toward top-gated monolayer MoS2 field-effect transistors with ZrO2/Al2O3 as composite dielectrics

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Facile Exfoliation for High-Quality Molybdenum Disulfide Nanoflakes and Relevant Field-Effect Transistors Developed With Thermal Treatment

Controlled Growth of Bilayer-MoS2 Films and MoS2-Based Field-Effect Transistor (FET) Performance Optimization

Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors