Abstract:During the last decade the 300 mm Si wafer has been optimized and one is already studying 450 mm crystals and wafers. The increasing silicon crystal diameter shows two important trends with respect to substrate characteristics: the interstitial oxygen concentration is decreasing while the size of grown in voids (COP's) in vacancy-rich crystals is increasing.The first effect is due the suppression of melt movements by the use of magnetic fields leading to a more limited transport of oxygen to the crystal. This and the decreasing thermal budget of advanced device processing leads to reduced internal gettering capacity. The increasing COP size is due to the combination of decreasing pulling rate and thermal gradient leading to a decreased void nucleation and increased thermal budget for void growth. The effect of Ge doping in the range between 10(16) cm(-3) and 10(19) cm(-3) on both COP's and oxygen precipitation will be discussed.

ChemInform Abstract: Germanium Thin Film Formation by Low‐Pressure Chemical Vapor Deposition.

ChemInform Abstract: One‐Dimensional Nanostructures of Silicon: Synthesis, Characterization and Applications

ChemInform Abstract: Ordered Mesoporous Silica‐Based Inorganic Nanocomposites

Germanium in Czochralski Silicon

ChemInform Abstract: Green Chemical Approaches Toward High‐Quality Semiconductor Nanocrystals

On the Formation of Solid State Crystallized Intrinsic Polycrystalline Germanium Thin Films

ChemInform Abstract: Synthesis of an Open‐Framework Copper—Germanium Phosphate [cu(h2o)2(oh)] 2Ge(po4)2.

ChemInform Abstract: A New 2‐D Hybrid Indate‐Germanate Based on the Linkages of Ge4O10F2 Clusters and {in2o6} Dimers.

ChemInform Abstract: Mild Benzene‐Thermal Route to GaP Nanorods and Nanospheres.

ChemInform Abstract: Improved Silicon Thin Film Growth on Glass Substrates by Periodic Regrowth.

Influence of Germanium on Silicon Wafers Used for Solar Cells

ChemInform Abstract: Semiconducting Non‐Molecular Nitrogen Up to 240 GPa and Its Low‐Pressure Stability.

ChemInform Abstract: Functional Ceramic Films with Reticular Structures Prepared by Electrostatic Spray Deposition Technique.

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

ChemInform Abstract: Formation of High‐Quality CdTe, CdSe, and CdS Nanocrystals Using CdO As Precursor.

ChemInform Abstract: Gas Phase to Solid State Evolution of the Electronic and Optical Properties of Conjugated Chains: A Theoretical Investigation

Germanium doping for improved silicon substrates and devices

ChemInform Abstract: Sol—Gel Fabrication and Electrical Property of Nanocrystalline (ln2o3)0.08(zro2)0.92 (ln: Sc, Y) Thin Films.

ChemInform Abstract: A Novel Low‐Temperature Synthetic Route to Crystalline Si3N4.

ChemInform Abstract: Solution‐Phase Synthesis of One‐Dimensional Semiconductor Nanostructures

ChemInform Abstract: Sol—Gel Preparation of Pb(Zr0.50Ti0.50)O3 Ferroelectric Thin Films Using Zirconium Oxynitrate As the Zirconium Source.